2SK1961

2SK1961 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 5

Technical content

Features

• Adoption of FBET process + Large | Y¢, | + Small Ciss + Very low noise figure Absolute Maximum Ratings at Ta= 25°C unit Drain-toSource Voltage Vpsx 15 v Gate-to-Drain Voltage Vops -15 V Gate Current Ig 10 mA Drain Current Ip 100 mA Allowable Power Dissipation Pp 500 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to +150 °C Electrical Characteristics at Ta=25°C min typ max unit G-D Breakdown Voltage Viercps Ig=—102A,Vps=0 —15 v Gate-to-Source Leakage Current Igsg Ves= -10V,Vps=0 -10 nA Cutoff Voltage Vesiom Vps=5V Ip=100nA -12 -26 -45 V Drain Current Ipss Vps=5V,Vgs=0 40% 15K mA Forward Transfer Admittance | Yee1() Vpg=5V,Ip=10mA,f=1kHz 15 19 mS | ¥p5 1 (2) Vps=5V,Vgs=0, f= 1kHz 24 32 mS Input Capacitance Ciss Vps=5V,Vgs=0, f= 1MHz 5.5 pF Reverse Transfer Capacitance Crss Vps=5V,Vgs=0, f=1MHz 1.6 pF Noise Figure NF Vps=5V,Rg=1k0,Ip=5mA, 13 dB f=1kHz Static Drain-toSource Rpston) Ip=10mA,Vgs=0 24 a on State Resistance 2% : The 25K1961 is classified by Ipgg as follows (unit : mA)

40 Y3 52 48 Y4 63 57 Y5 75

(unit: mm) 2.0 0,64 O45 tt “ 2 14 0.65 | JEDEC: TO-92 D: Drain EIAJ : SC-43 G: Gate SANYO: NP S: Source SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN “13194TH (KOTO) X-8395 No.4502-1/5

Ip =~ Vi ID - Vi : TELE LT : ry. 4 80 < 80 a B50 Vgg= OV. 260 — Vos=0V. 5 ~0.5V, g =0. i=] VA SS 6 —— svi 20 7 20 -1.5V" Beever ° pd 2), = 2.00 ° SS ee () 1 2 3 4 5 [ 2 4 6 8 10 . Drain-toSource Voltage,Vps - V Drain-toSource Voltage,Vps — V In - Vas Ip - Ves 10 10 s 80 < 80 2 60 3 60 g & FA 3 3 8 29 oY 5 29 y; z | a |_| “5 “4 3 -2 = 0 -5 “6 3 -2 71 0 Gate-toSource Voltage,Vgs — V Gate-toSource Voltage,Vgs — V 2, L¥isl- Ipss a, |¥sl = Io Es = 5 = i — sg _ - ~ 2 = : : Lt hs = = orn! as = | ¥¢q 1 2(Vas=0) : | ox ZO 3 gf Pa z | ¥e 11 p=10mA) z a | < ~ | ary all i 510 5 5 : 4 pt é, el | [tT ae zg” E oe Ey & 3 100 & T 10 7 10 Saturation Drain Current,Ipgg — mA Drain Current,Ip — mA Ves(off) - loss Roston)_- _!pss

7 Vps=5V 7 Tp=10mA

Ip=100,A| e Ves=0 > f yi z g Fa & 4 4 ge >. L— Bs 4 A ca E _ Zz 3 3 |-—~ ba 3a 2 = 8 ag 3 a2 100 0 . ° 100 Drain Current,[pgs — mA Saturation Drain Current,Ipgg - mA No.4502-2/5

Ciss - Vps f Crss_- Vos | Vos=0 % Vgs=0 Pit dtd] ae) =e gt | TT TTT Mose * pity a 1 10 oY g a PlLiIRTT TET Tf is} gq ft) Peet) = EI &

3 Si LD

& 3 al Zz 2 g ta | PlLiL Up yy T 40 | 10 10 10 Drain-toSource Voltage,Vps — V Drainto-Source Voltage, Vps — V Pp - Ta Vig - Voc = 60 “0 Tp=l0mA & f=100MHz

500 Common Gate’

a Oe NX 30, pat XL ELL = q Big 4 30 aN a) = ao a Py : Li NEL 2 ett TENT S S100) > Moores LT z z IN jf je} | % 20 40 60 80 10 120 140 160 °% 2 “4 6 8 10 12 14 Ambient Temperature,Ta ~°C Drainto-Gate Voltage,Vpg — V Vig - Vi Vig - Vi to 9 DG ‘ 1g DG Ip=10mA Tp=10mA f£=100MHz f=100MHz Common Gate| 3 Common Gate! 30) % Be saa oo ALK Ld 2 aN = _| LA VS 2 th | (oe, ee 2 4 6 8 10 12 4% °O 2 4 6 8 10 12 1 Drain-to-Gate Voltage, Vpq - V Drain-toGate Voltage,Vpq — V ne Yog - Voc Vig - Ib . Tp=10mA 40) Vpg=6v f=100MHz f£=100MHz OKO ‘Common Gate, 30 Common Gate| ova Tex, 2 |_| fe ee aa [ 20 | &ie_| 1 \\ i] rss) Te ET ig ol an 0 = ef 0 2 4 6 8 10 12 1% 105 2 4 6 8 10 12 4 DraintoGate Voltage,Vpg — V Drain Currently — mA No.4502-3/5

a Vig - Ib Vig - Io.

0 Voo=8v 20 pa=eV

£=100MHz £=100MHz Common Gate| ne Common Gate’ 30 “ | 2 g | [J 4 2 4a . —_— » [| » 3 = o8 — | é | MO é % oui atopy | 0 ——— es ae ee Se 6 oO 2 4 6 8 10 12 14 0 2 4 6 8 10 12 16 Drain Currently — mA Drain Currently ~ mA te Yog - Ip Vig - f : Vpo=5V 40 Vpo=5V f=100MHz Ip=10mA 2.0) pam ‘Common Gate} 30 Common Gate CEES EEE Joo ' 1.2) | ! Pe eet big ‘ | | tt PET TE 0 | | [| 10 . 0 2 4 6 6 10 12 4% 0 1 20 30 46D 5W 6H 70 8M Drain Current[p — mA Frequency, - MHz Vig - f Vig - f 40 9 4 “9 Vpo=5V Vpo=5V Ip=10mA Ip=10mA Common Gate| Common Gate 30) 3 nQ | , oj} = Bie t+ «2 “s a4} = 4 Lé a B ° Za — [| [) WoO 20 30 40 500 60 70 8 ° m 20 300 40 SO 6M 7020 8M Frequency,f — MHz Frequency,f - MHz Yog - f

4 Vpo=av

Ip=10mA on A fan 15 [| PT Ae | Fr] [| yi % 1 20 0 4M 5H 60 700 80 Frequency,f— MHz No.4502-4/5

S Parameter Frequency Characteristic S Parameter Frequency Characteristic (Common Gate) (Vpg=5V,1p=10mA) (Common Gate) (Vpg=5V, Ip=10mA)

150 Ho oa

120) 60" mK he BEERS LA LXER Ne ORE STEP es n TEN aE f~ WUT KS = f= 100MH: A a TD fant

4 COSTES OT

a <) Bee SSL Lif STKE . a” 450 30 Le ARES Sra SAFER SEARO arr) <i100 SH oO Sot 120 “60° x5 Cr -90" S Parameter (Common Gate) Vpo=5V, Ip =10mA, Zo= 500 [Freeamia [ isut | 2su | isui [ 2s | ist | 2s | ise! | sm | WH No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, W Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, ‘subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, a No.4502-5/5