2SK1946-01MR FUJI

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2SK1946-01MR__ cus power mos-rer LT N-GHANNEL SILICON POWER MOS-FET FAP Il SE RI ES i l-eatures HM Outline Drawings @High current @ Low on-resistance woes, 32% £5202 gat @No secondary breakdown y 27802 @ Low driving power a 3 @ High forward Transconductance ro alg @ Avalanche-proof loa S 1 Gate 2) Dron BL Applications aot el @ Nlotor controllers 4 97802 oot ®@ General purpose power amplifier dete sete ca @CC-DC converters @ Viax. Ratings and Characteristics @f bsolute Maximum Ratings(Te= 25°C) . ari + (unless otherwise specified) Mi Equivalent Circuit Schematic =~ Items [ Symbols | Ratings | Units Lrain-source voltage 60 Vv Dr: a - a ~Train-gate voltage (Rz.=20KO) Voos 60 Vv in (D) “Continuous drain current I A __ Pulsed drain current Toutes A ~Cate-source voltage Ves Vv ogee __Niax. power dissipation Pp [50 |W Source (S) Cperating and storage Ton 150 °C _temperature range Tas =55~ +150] ‘°C @£€lectrical Characteristics(Tc=25'C) (unless otherwise specified) _ Items [Symbols | __ Test Conditions | Min. T Typ. | Max. [ Units _ Erain-source breakdown voltage Veawoss Ip=ImA___Ves=0V reo | | | Vv ~ Cate threshold voltage Vesun Vv rol vain ¢ Vos=60V [Ta=25C | | 10 | 500 | vA _2et0 gate voltage drain current Toss Vos=0V T= 105°C a mA ~ Cate-source leakage current Toss Vos=+20V_Vos=0V. [| 10 | 100 [| nA _Train-source on-state resistance Rosiom 1p=22.58 5s OTE 2 _ Forward transconductance _ Bis 1,=22.5A _Vns=25V |i | 30 | | § ~_Tnput capacitance Cis Vos =25V |_| 2100 | 3150 ~Cutput capacitance Coss Ves=0V [| 860_] 1290 | pF ~_Feverse transfer capacitance Cras f =1MHz [| 490 | 740 ‘Turn-on time toy tdon =30V 1p=45 [| 30 | 45 | Abn ton +) t very [a0 —", ‘Vurn-off time tors tdiorn Re =250 [| 500] 750_| — hte = tavern +t) ts a [| 400 | 600 | _/valanche capability Taw L=100vH_ To, =25°C | 4 | | A Continuous reverse drain current | Ios eS [LA “Fulsed reverse drain current Tow | 180 A __Tiiode forward on-voltage Veo Te=2XIon Vos=0V_ To. =25°C 1.5 Vv “Feverse recovery time tr Tr=Ior Ves=0V {100 | | _ ns __Feverse recovery charge Qe -dIp/d=100A/us Ta=2sc {| 05 | | uC @)hermal Characteristics _ Items. [Symbols | ___ Test Conditions | ‘Min. | Typ. | Max. | Units ; i [Raw | chaneltoair | | 2.5 CW __ hema) resistance [Rawson | channel to cased 2.5 [c/w A2-302

2S K1946-01MR FUJI POWER MOS-FET a @ Characteristics ia) i ETT | | look 12 £Ves) fas pulse test, Ten 25° H [Ef Rostond= £2): lom225A, Vos=1 ov LTT PTE 20 Tern a HEE ery TE Eoetossseonssstsoase COOOL soy {o ! FH EEO eee A Ht Por imal Perr 4 4 1 a ee so on I be an ml FESS zee | ol COR EER ERR EEE EEA sawn Coeooor EERE EEE ane eye HEE FRSC ESS See COE Cee ERE ee Se & Co BEER Rose FRE eer ae // SSSR eES 9) aE Re er oe ER av EE ow Eee of POC Fee eee i? /2oaneeee aman Car os aces Pressey Hd EESSSeiecssecesseees Me OPE EERE EEE EEE oh eH FERRE ERA Oo 1 2 3 4 EJ 50 0 50 100 150 VostV) TelC) Typical Output Characteristics Drain-Source on-State Resistance vs. Teh 100 2005 lo= (Vos) : 804s pulse test, Vos=25V Ros(ond= # (10) : 80s pulse test. Ton= 25°C a {—t ee wendy} f+ bv I yo tenn 2 5S 180 TT ee = a GES EERE SRR ae oe a A Se voll a lo. a0) on a a ee a 4 @ FER RS wo FP ee ad mil [— = i ey (nae P7iiy aes oe oe al a AD | da 0 2 4 6 EJ 0 oO 20 40 60 B80 100 Ves(V) to(A) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo 60 x TP Teese LI va pot 40}! La al ml pt =F LA | —{] LE jit ° y Cee CT) Z E Sesssenatere=tbtca r Ty jf vi ~ te aa PRES CeCe ST Ht MI HETGRTOTARGanEceOTEE H-4 — Coceeeeeeeeeeee PEER cesT faesseertvaores dt | |_| COCO 0 20 40 60 80 100 50 Cy 50 0 150 bla) ToC) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten A2-303

FUJI POWER MOS-FET 2SK1946-01MR en oy 50, 20 a Sooo eer Abe tras neta Had jo | i SF eemenneeae EEE eH} «ALOE EE or rr on ves LPAI 5 ss Che a ee De RSet mim FRR ee NI UU TT: sit anaes | NOP rill AAC ey gee vee A CRESS SSSR SSSSSEE Sess Pei soy ASS 3 oy c EEE ERSSERESA Been Vos ant AAA HBV Vg CoRR ni ne 77 (nF) nana atts oe Gy |! raltse’ cSuusESsEEESD “ i T i Vi ra yosieccaeuaneenennets | tat x TE TELL {RcSSEnSEESESESESSEER 10 ol DS 0 10 20 30 40 0 50 700 BO 200 Vos(V) Qg(nc) Typical Capacitances vs. Vos Typical Input Charge NO EEE =Uaiapeidec=es SEE eEeRAAREEEEE Sy FAA HEE Hee ! FEE PET “eee eee aaa =ee = ad IS Ft [71 i _| NI . FART e EECPEPSSee 0 tl ES ===aeee eee aa tf LK ES —— ee oo io \\ Coe ECCCeP Cecio rH rH EEREE EEE rr is oli TTT | OCCT Vs0(V) Te('C) Forward Characteristics of Reverse Diode Power Dissipation vs. Tc Eien o ae | eee oe LT oe Sessa oS Zineme EE HY to Otel el ett Kw) EC ee oT a) = Set vo ee aes IT LU SSE om Se Se semesicn| 10% bet ——— 1 Ooms. EB Rtntr 0,0 2 Fi ei So ee Seat oo 1 GE Sot mannii ep Bee i | or ro LO ETc A ec 0 ot os oe 10 10° 10° co 19" 10 y wn t(S) fos Transient Thermal Impedance Safe Operating Area A2-304

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