2SK1938-01R FUJI

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DEVICE NAME : Power MOSFET TYPE NAME : 2SK1938-01R SPEC. No. : Fuji Electric Co.,Ltd This Specification is subject to change without notice. a a) Fuji Electric Colic i a i z : "fF . Y 0257-R-004a

  1. Scope This specifies Fuji power MOSFET 2SK1938-01R : 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching : 4. Qutview TO-3PF = See to 5/11 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) sim pr disten [re | ww | 6. Electrical characteristics at Tc=25°C (unless otherwise specified) Static ratings | | J Description Symbo| Conditions Unit Pa [me [we | Drain-source lo =1mA breakdown voltage | BVoss | Ves=0V Vv Gate threshold | > =1mA \\ voltage | Vescem | Vos=Ves 2.5 3.0 3.5 Vv drain current Ves= OV Gate-source Voes=+30V leakage current Vos= OV nA Drain-source on- lo = 9A state ‘resistance Ves= 10V 0.35} Q : 7 EA Fuji Electric Co.Ltd. , x = Y 0257-R-003a

Description Symbo| Conditions Unit , Pre [om [me Forward lo = 9A transconductance gfs Vos= 25V Ss Vos= 25V f = IMHz Reverse transfer capacitance Crss . 120 pF [ssi e | Turn-on time Vec=300V Ves= 10V Turn-off time [ae [a | Reverse diode [fecserisier . Description Symbol Conditions Unit Pie [ve Pw | Avalanche L=100 4H, Tch=25°C capability lav tsee Figl and 2 A Diode forward le =2%X lor on-vol tage Vso Ves=0V, Ten= 25° 1.5 Vv Reverse recovery te =lor time tre Vos=0V ns ~dl¢/dt=-100A/us Reverse recovery Ten=25C charge Qee 4.0 KC T. Thermal resistance Description Symbo! Conditions Unit : Pie [ie [| Ce a A I] Thermal resistance Free] SP Jer : HH Fuji Electric Co.Ltd. I Y 0257-R-003a

: Fig.1 Test circuit - . ; L > 0.U.T 7 . . = Vee 0Q Vec=1/10 # Vos L= W0K“HH 1 pulse Fig.2 Operating waveforms

0 J LL Ves

Fuji Electric Co,Ltd. 3| wee 4“. FR Y 0257-R-003a

TYPE +: 2SK1938-O1R 15,540.35 By 5403 B3 # 240.5 in 3.28 i. fe} rae A i US pe : { ™ . Trade mark _— ge ; Type name | tS w N 3 g gq | 8 See Note 1. Esk 38 * a Lot No. Gi ay iy qj S| is, Hf fF Hl isto in |¢7| nes . E Hl Bf aw03¢ a rns S

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: H H i Pre-Solder H ow Oe i 11:58 0.6 8 om on om lst} |] [P| Oo ® © CONNECTION Note |. Guaranteed mark of avalanche ruggedness. @ GATE @® DRAIN @ source DIMENSIONS ARE IN MILLIMETERS. . : g == Fuji Electric Co,Ltd. 3 H+ Y 0257-R-003a

Power Dissipation : PD=f (TC) 125 e 50 108 150 TItl . Safe operating area ID=f (VDS) :D=0.01, Te=25'C 2 : . . . 19: eee ne et . be NO NO Shue a : SS me a ‘ ' : SEO ats : Wee eee eee ee Sach : : ‘\\Matins 0G i i CE 16 10 sm 41 E oy HA FuEtectic Cod ff), Y 0257-R-003a

Typical output characteristics . ID=f(VDS):80us pulse test, Tch=25'C . 5a _ : : 8. V : . : : 5.0 : 1 Aa : : i 4.5) : : 4, OV. a . r) 10 20 36 DS (VI : Typical Transfer Characteristic ID=f(VGS):804s pulse test, VDS=25V se : : ZL : : ; e 2 4 6 8 1g vos v1 ; Fuji Electric Co,Ltd 3 --7, 7) FR * Y 025T-R-003a

Typical Transconductance . gfs=f(ID):80u4s pulse test, VDS=25V,Tch=25'C - 48 . . @ 10 28 ~ 30 48 10) . Typical Drain-source on-state resistance - RDS(on)=f(ID):80us pulse test, Tch=25'C : | : : : : : H i : : i = H i i : : Ss | : : : : It) . . . . H : : : : U i : : I i : : : 2A Mav av ; : wat : : a 10 28 30 4a 5a na . . £ ? KH Fuji Electric Co,Ltd. 8 oY ER z te RR Y 0257-R-003a

Drain-source on-state resistanse . RDS (on)=£ (Tch) : ID=9A, VGS=10V 1.08 ; 8.00 i i i -58 e 30 _ 100 158 Teh (C1 Gate threshold voltage VGS (th)=f (Tch) : VDS=VGS, ID=1mA hero : typ. Q : : : -58 @ 50 106 150 Teh (C1 g EH Fuji Electric Co,Ltd. g 14 Y 0257-R-003a

Typical gate charge characteristics VGS=f (Qg) : ID=18A . . 509 25 . ANEEeeee 8 rr rn nr (ee ee Ts) . Gg (nc! . Typical capacitances C=f (VDS) : VGS=OV, f=1NHz . 108, : : : : Ciss Y : : Crss “y 10 20 30 43 YDS (VI © oct; 2 iy Ee Fuji Electric Co.Ltd. g} - vA aaa Y 0257-R-003a

Farward characteristic of reverse diode , IF=f(VSD):80us pulse test 102, . 2 : : & : : 1071 i io a a8 0.5 he 1.5 ; Vso (v1 ; Transient thermal impedance Zthch-c=f(t) parameter:D=t/T . : 10, z é i x : 5 ‘ Gf B : : : : : te : : : ‘ : 18-1 1a-4 187) 18? 10+ 108 iat tS) . - y Ee Fuji Electric Co.Ltd. VA ; uN : LER Y 0257-R-003a