2SK1916-01R FUJI
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- - 1 FUJI POWER MOS-FET ee N-SHANNEL SILICON POWER MOS-FET F Il SERI ES M@ Features HM Outline Drawings @tligh speed switching @ Low on-resistance 155203, 932802 55803 @Nlo secondary breakdown 7 + as? Low driving power Bee @tligh voltage sal Ue ©\\cs= £30V Guarantee 3) * ® £valanche-proof 2403 1s Gote + ate 303 i 2 Ore @ Applications i Od 3: Souce © .witching regulators ‘ ours susso2| | | sessoe oot | | sseoz @1)C-DC converters - _ © ieneral purpose power amplifier JEDEC — say @ Max. Ratings and Characteristics Wi Equivalent Circuit Schematic @/,bsolute Maximum Ratings(Tc= 25°C) {unless otherwise specified) = Tems Range [Units Drain D) ~Train-source voltage Vos 450 V “Train-gate voltage Res =20K0) Voor 450 Vv ~ Continuous drain current To 18 A ose) __Fulsed drain current Tous 44 A Source (S) ~Cate-source voltage Ves £30 V “Max. power dissipation Py 80 W Cperating and storage To 150 c _tumperature range Tae —35~ +150) “C @£lectrical Characteristics(Tc=25°C) (unless otherwise specified) _— Items [Symbols [Test Conditions | Min. | Typ. | Max. | Units _Traisource breakdown voltage | Vass | In=1mA_ Ves=0V Vv “Cate threshold voltage Vesa qt ne 3.5 5.0 Vv
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Zero gate voltage drain current Toss veo TeewsCt Le Lie bad _ Cate-source leakage current Tass Vos=£30V_Vos=0V. || 10 | 100 | nA _ Train-source on-state resistance Rosiom Ip=8A Ves=10V [| 0.30 | 0.45 | 0 __Forward transconductance Bs In=8A_Vos=25V 10 Ss “Tiput capacitance Cus Voe=25V 1800 | 2700 ~Cutput capacitance Coss Ves=0V 270 pF __Feverse transfer capacitance Coss f =1MHz 120 ‘Turn-on time ton tdoons Tee=300V n= [70 0] — Ar =taon tt) t vow [iw 50] Torn-off time tou tdhoro Ro =250 ee tour = tern tt) te a” [| 80 T1207] __Continuous reverse drain current | Tor fT a “Fulsed reverse drain current Tow [oy a a ~ Tiode forward on-voltage Vso Iy=2XIne Vos=0V Tan=25C| | 1.18 | 1.70 Vv ~ Reverse recovery time te Tr=lon Ves=0V [400 Tas ~ Reverse recovery charge Que -dlr/d=100A/us Ta=25c [| 4.0 | ue @ Thermal Characteristics _ Ttems | Symbols [Test Conditions | Min. | Typ. | Max. | Units sete Rovenaa | [30.0 [*c/w _Thermal resistance Ruyen-a [156 [cw A2-266
2SK 1916-01R FUJI POWER MOS-FET @ Characteristics 40) 15) Set 2aeeeeenre PPE HCH SSnas ‘conanmecce HEHEHE peat CEE 0 7 oo aoe saan — + ITT Ty ann a2 se CoCo SESr Zanneeee=nye EHSAUREREBEEEC » POPE Rosion HHH [TT ae one os {TT PaGnnEe =a ww EP psy | wm “TO a eT Loe errr 2 see rr Sere Ce ry i) 400 7-H a TE ai Fy A ol o 10 20 30 ~50 oO 50 100 130 Vos(V) Tenl*C) Typical Output Characteristics Drain-Source on-State Resistance vs. Teh “ a ss) Ros(on)= f (10); 804s pulse test. Ton= 25°C lo= £( Vos) : 80s pulse test, Vos=4.5V 5.0V 55V 6.0V 65V TOV Poe RR 30} I = aos sc aa LH Cy] ee “a oe a ETT Ro —— a rr Ce Co » Peery R COA laneamme BV ® FREE ZA iste A ‘s L EE asta = Eee Ee a (COCO Ves(V} 1o(A) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo 15 6 CTT TTT [TT J vescan='' en): Vow=Veh, 1b tak sre anit BH Pepe LPP re EE eel | A rH aE Pee He [TTT TT SSSR Ree HAL LI pee et Hee eae ene a COPE res Vesiny
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