2SK1847 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Low ON resistance. - Very high-speed switching. - Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drain-to-Source Voltage Vpss 30 Vv Gate-to-Source Voltage Voss £15 v Drain Current(DC) Ip 500 mA Drain Current(Pulse) Ipp PWS lous, duty cycleS1% 2 A Allowable Power Dissipation Pp 250 mW Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Veerypss Ip=1mA,Vgg=0 30 Vv Zero Gate Voltage Ipss Vps=30V,Vgs=0 10) pA Drain Current Gate-to-Source Leakage Current Iggg Vos= £12V,Vps=0 £10 ywA Cutoff Voltage Vosom Vps=10V,Ip=1mA 1.0 2.0 v Forward Transfer Admittance 1 Vil Vpg=10V,Ip=250mA 350 700 mS Static Drain to Source Rpsion) Ip =250mA,Vgs=10V 0.5 0.75 2 on State Resistance Rpsion) Ip=250mA,Vgg=4V 075 11° 2 Input Capacitance Ciss Vps=10V, f=1MHz 50 pF Output Capacitance Coss Vps= 10V, f= 1MHz 35 pF Reverse Transfer Capacitance Crss Vps=10V, f=1MHz 10 pF Turn-ON Delay Time tacon) See specified Test Circuit. 5 ns Rise Time tr ” 10 ns Turn-OFF Delay Time tam % 35 ns Fall Time te ” 20 ns Diode Forward Voltage Vsp Is=500mA,Vgs=0 0.9 Vv Marking: KJ Package Dimensions 2091A T c (unit : mm) Switching Time Test Circuit 0.6 0.16 Vop#i5V vin Gis 10Vv ov JL Tp=250mA if aa Vin RL=600 ‘ee PW=10x5 =| a D.c, $4x S Your oo P.G ° 2:8 ° 1: Gate Soa s/ asKte4? 2: Source gy SANYO: CP tp} to SANYO Electric Co.,Ltd. Semiconductor Business Headquarters _ TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 51694TH (KOTO) AX-7823 No.4505-1/3

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12 Ros(on) — Ta Ciss, Coss, Crss - Vos

° a A EES os ee fos a a a SR BE : _ a § i. meet) be Se : Pee eT eee So “40 0 40 80 120 160 % 4 8 12 16 20 24 28 Ambient Temperature,Ta —*C Drain-to-Source Voltage, Vps — V SWTime - Ip 280 Pp - Ta { | [oT TT] voo=isv 5 LITT TTT Fa [| Ves=10V 1 260-7 Pt Re oT TN

24 ST = S20) IN |_|

e all A) Coos So. F TT TTP) PIKE eg { [mw TTT) ¢ — NK si if |] [tT | de HHA repre et TTI 7 o4 74.0 0 20 40 _ 60. 80 10 120 %0 160 Drain Current lp — A Ambient Temperature,Ta —°C No.4505-2/3

HI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any . and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or ligation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.4505-3/3