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Silicon Junction FETs (Small Signal) unit: mm 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor n Features l Low gate to source leakage current, IGSS l Small capacitance of Ciss, Coss, Crss l Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. n Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol V GDO V GSO ID IG PD Tj Tstg Ratings -40 -40 150 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Symbol IDSS * IGSS V GDS V GSC | Yfs | C iss C oss C rss Conditions V DS = 10V, VGS = 0 V GS = -20V, VDS = 0 IG = -10mA, VDS = 0 V DS = 10V, ID = 1mA V DS = 10V, VGS = 0, f = 1kHz V DS = 10V, VGS = 0, f = 1MHz min -40 0.05 max 200 - 0.5 Unit mA nA V V mS pF pF pF * IDSS rank classification typ -1.3 0.4 0.4 Runk IDSS (mA) Marking Symbol O 30 to 75 EBP P 50 to 100 EBQ Q 70 to 130 EBR R 100 to 200 EBS 1: Source JEDEC: TO-236 2: Drain EIAJ: SC-59 3: Gate Mini Type Package (3-pin) Marking Symbol (Example): EB 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9±0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4±0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05
Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS | Yfs | ¾ VGS | Yfs | ¾ ID C iss, Coss, Crss ¾ VDS 2SK1842 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 240 200 160 120 Ta=25˚C VGS =0.4V 0.2V – 0.2V – 0.4V – 0.6V Drain to source voltage VDS (V) Drain current ID (mA) 240 200 160 120 VDS =10V Ta=75˚C 25˚C –25˚C Gate to source voltage VGS (V) Drain current ID (mA) 1.2 1.0 0.8 0.6 0.4 0.2 VDS =10V f=1kHz Ta=25˚C I DSS =100mA Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 0 240 20016040 12080 240 200 160 120 IDSS =100mA VDS =10V Ta=25˚C Drain current ID (mA) Forward transfer admittance |Yfs| (mS ) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 VGS =0V Ta=25˚C f=1MHz C iss C oss C rss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)