2SK1828_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK1828 ■ Features
- VDS (V) = 20V
- ID = 50mA
- RDS(ON) ＜ 40Ω (VGS = 2.5V)
- Low threshold voltage: Vth = 0.5~1.5 V 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current ID 50 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±10V ±1 uA Gate threshold voltage VGS(th) VDS=3V ID=100uA 0.5 1.5 V Static Drain-Source On-Resistance RDS(On) VGS=2.5V, ID=10mA 40 Ω Forward Transconductance gFS VDS=3V, ID=10mA 20 ms Input Capacitance Ciss 5.5 Output Capacitance Coss 6.5 Reverse Transfer Capacitance Crss 1.6 Turn-On DelayTime td(on) 140 Turn-Off DelayTime td(off) 140 pF VGS=0~2.5V, VDS=3V, ID=10mA VGS=0V, VDS=3V, f=1MHz ns ■ Marking Marking KI
www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1828 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1828 ■ Typical Characterisitics