2SK1823-01R FUJI
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2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES @ Features Outline Drawings @ digh current © .ow on-resistance ~ @ lo secondary breakdown a 2 @ .ow driving power 5 @ 4igh forward Transconductance y “| @ Avalanche-proof @ ncluding G-S Zenner diode Applications vw 1 sate 2: Dron ® Vitor controllers 3: Source @ Senaral purpose power amplifier L © c-D SDE converters _veoec | HM Max. Ratings and Characteristics SO ee @.\\bsolute Maximum Ratings(Tc=25°C) . co, . = Tens Unis Hi Equivalent Circuit Schematic “Tirain-source voltage Voss | 60 | OV ~ Continuous drain current Ip A ~ Pulsed drain current Trou 200 A Drain (D) Continuous reverse drain current | Toe 50 A ~ Gate-source peak voltage Voss £20 Vv Gate (G) “Wlax. power dissipation Pp [80 |W Operating and storage Tor °C _lemperature range Tag °c Source (S) @ :lectrical Characteristics(Tc= 25°C) ~ Items | Symbols [Test Conditions | Min. Typ. J Max. | Units __Drain-source breakdown voltage _|_Viswnss | In=ImA__ Vos=0V ___|_ 60 Lv _Gaie threshold voltage | Ves | b= IMA Vos= Ves 10 | 15 | 2.0 Vv : tees Vos =60V jf 500 | A _ tere gate voltage drain current loss _| Ves=0V ee mA ~ Gate-source leakage current | Tess Ves==16V_ Vos=0V es Cee Ivrain-source on-state resistance | R, Io=25A_Ves=4V. e_[ 27 ma Drains t vscon)1)=25A Vew=10V. ma __J'orward transconductance es _ | Wo=25A _Vo5=25V 20 S _Snput capacitance Cass Vos=25V 2600_| 3900 _ Output capacitance Cos | Vos =0V pF ~ Reverse transfer capacitance | Crs { =IMHz “Furn-on time ton tdoom a - tea taan +t) te Veciy A wot, *Curn-off time tor tdrore R= 250 780 bore =tayorn bts) tr _* 630 _ __liode forward on-voltage Veo Ty=2XTe_ Ves=0V_ Tn =25°C 2.18 V ~ iReverse recovery time tre Ip=Ipn_di/d=100A/us Tax =25°C 120 ns @(hermal Characteristics ~ Items | Symbols [Test Conditions Min. T Typ. | Max. | Units “4 esistance Rincenw [chee toa °C/W _hermal resistance Riyeng | channeltocase 56 | CW A2-260
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