2SK1822-01M FUJI
Document overview
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Technical content
2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V 0,07Ω 20A 35W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 60 V Continous Drain Current I D 20 A Pulsed Drain Current I D(puls) 80 A Continous Reverse Drain Current I DR 20 A Gate-Source-Voltage V GS ±20 V Max. Power Dissipation P D 35 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V GS =0V 60 V Gate Threshhold Voltage V GS(th) ID =1mA V DS= V GS 1,0 1,5 2,0 V Zero Gate Voltage Drain Current I DSS V DS =60V T ch =25°C 500 µA V GS =0V T ch =125°C 1,0 mA Gate Source Leakage Current I GSS V GS =±16V V DS =0V 10 µA Drain Source On-State Resistance R DS(on) ID =10A V GS =4V 0,09 0,11 Ω ID =10A V GS =10V 0,055 0,07 Ω Forward Transconductance g fs ID =10A V DS =25V 6 12 S Input Capacitance C iss V DS =25V 600 900 pF Output Capacitance C oss V GS =0V 260 390 pF Reverse Transfer Capacitance C rss f=1MHz 150 240 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =30V 7 11 ns t r ID =20A 30 45 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 100 150 ns t f R GS =25 Ω 70 110 ns Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,45 2,18 V Reverse Recovery Time t rr IF =I DR V GS =0V 90 130 ns -dI F /d t=100A/µs T ch =25°C - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 62,5 °C/W R th(ch-c) channel to case 3,57 °C/W FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET 2SK1822-01M 60V 0,07Ω 20A 35W FAP-IIIA Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ↑ 1 ↑ 2 ↑ 3 ID [A] R DS(ON) [ Ω ] ID [A] V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch ↑ 4 4 ↑ 5 ↑ 6 R DS(ON) [ Ω ] g fs [S] V GS(th) [V] ID [A] → ID [A] → T ch [°C] → Typical Capacitance vs. V DS Typical Input Charge Forward Characteristics of Reverse Diode ↑ 7 ↑ 8 ↑ ↑ 9 C [nF] V DS [V] V GS [V] IF [A] V DS [V] → Q g [nC] → V SD [V] → Allowable Power Dissipation vs. T C Safe operation area ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 11 P D [W] ID [A] T c [°C] → V DS [V] → t [s] → This specification is subject to change without notice!