2SK1819-01MR FUJI
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2SK1819-01MR FUJI POWER MOS-FET SY N-CHANNEL ENHANCEMENT TYPE MOS-FET F Vv Ss E R | ES @ Features Outline Drawings @ Include fast recovery diode 2825 gop 48202 @iligh voltage | —— [Leno @ low driving power 1 rT aia @ Avalanche-proof Rea 3} on) LL . . « sl gi Applications g lees! *| ©! otor controllers oe -+ J @ loverters tell] pet EtOe ; © Choppors a | 2 bmn | S:Source Sear MH Max. Ratings and Characteristics Equivalent Circuit Schematic @/\\bsolute Maximum Ratings(Tc=25°C) ~~ Items. Ratings | Units ~_[rain-source voltage Voss 450 V Drain (D) ~ Continuous drain current Ip 5 A —Fulsed drain current Tous 20 A FRED _ Continuous reverse drain current | Tnx 5 A Gate (G) __Cate-source peak voltage Voss £25 Vv __Max. power dissipation Py _ 35 Ww Source (S) Cperating and storage Ten 150 Cc _temperature range Tess =55~+150/ °C - _ @ Electrical Characteristics(Tc=25°C) _ Items [ Symbols [Test Conditions| Min. | Typ. | Max. | Units “Tiainsource breakdown voltage | Vaswoss | In=ImA__Vos=0V [450] | _ Cate threshold voltage Vesum Tp=10mA_ Vos=Ves [22 | 30 [40 | Vv __ Zo gate voltage drain current | Toss Vos=450V_ Ves=0V Ta =25C | | (10 | 500 uA _Gate-source leakage current Tess Vos=+25V Vos=0V TSS SSCL nA __Train-source on-state resistance | Rosiom Wy=2.5A Vos=10V ee ee ee 2 ~ Forward transconductance Sis 1p=2.5A_Vps=25V 3.0 | 4.2 S$ ~ Tiput capacitance Cus Vos=25V 500 | 750 __Cutput capacitance Cons Ves=0V [807 120 pF __ Reverse transfer capacitance | Cres f =1MHz [| 40 | C60 ‘Turn-on time toa tdoony 1 =30Vy [5 40 = Vec=300V Re=250 Con = tegon +t) te Lo5A 30 | 45 hs Turn-off time tore torr Vo. 10V 0 | 170 — Corr = torn tte) ty ss a __Liode forward on-voltage_ Vso Te=Tor Ves=0V_ Ta = 25°C Vv _Reverse recovery time tee Tp=Ine_d/ad=100A/us To =25C | | 150 | _—*i| ns @Thermal Characteristics _ Items. [ Symbols [Test Conditions| Min. | Typ. | Max. | unis z ste Rinyon-w [| 62.5 [°C/W A2-250
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