2SK1818-MR FUJI
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Technical content
2SK1 81 8-M R FUJI POWER MOS-FET re N-Ct ANNEL ENHANCEMENT TYPE MOS-FET F Vv Ss E R | ES Features W Outline Drawings @ include fast recovery diode 009 eset esu02 @ Hig) voltage [ Sf pees @ Lov: driving power — J Oe |) B Applications 3 r_] “a ® Motor controllers ie 7 mmf 1 @ Inverters ar ql I] sa | i © Cheppors _ | 1 yee asus || | oscso2 [J en02 SC-67 HM Max. Ratings and Characteristics Mi Equivalent Circuit Schematic Items [ Symbols | Ratings | Units | Draia-source voltage 250 - Vv Drain (D) Continuous drain current 20 A Puls3d drain current [Town | 80. | A FRED Cont nuous reverse drain current A Gate (G) ~Gate-source peak voltage Vv Max. power dissipation W Source (S) Ope: ating and storage Ton 150 Cc temy erature range Toe =55~ +150] °C @Elec trical Characteristics(Tc= 25°C) Items | Symbols [Test Conditions |~Min. | Typ. | Max. | Units Drait -source breakdown voltage Ip=ImA__Ves=0V o0 [Of UU Gate threshold voltage Ip=10mA__Vos=Vos 21 3.0 4.0 Vv Zero gate voltage drain current Vos=250V__Vos=0V_ Tan =25'C 10 | 500 | wA Gate source leakage current Ves=+20V_Vog=0V 100, nA Drait -source on-state resistance Jy=10A_ Ves=10V. [0.16 | 0.25 | 8 Forvard transconductance | gs |v =10A_ Vos =25V. | 6 | 2 ft | s Inpu : capacitance Vos=25V |__| 1100 Out. ut capacitance Vos=0V [77240 [7 360] pF Reverse transfer capacitance f =1MHz 130 200 Turt-on time ton 1 =150V Ro aos (tn? tuon tt) rv aeial a Turt -off time torr Vv, =10V | 200 300 Diod2 forward on-voltage Vso Ip=Tox Ves=0V_ Ten =25°C [| 095 | 18 | UV Reverse recovery time ty e=Iox di/d=100A/us To =25'C |_| 100 | 150 | ns @The mal Characteristics Items | Symbols | __Test Conditions] Min. [ Typ. | Max. | Units : Rue | channeltoair TT 25 CW ‘Thermal resistance Rugg [channel tocase E28 CW A2-249
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