2SK1740 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
Features
- Adoption of FBET process.
- Large yfs.
- Small Ciss
- Small-sized package permitting 2SK1740-applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSX 40 V Gate-to-Drain Voltage V GDS - -40 V Gate Current I G 10 mA Drain Current I D 75 mA Allowable Power Dissipation P D 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDS IG =- -10µA, VDS =0V - -40 V Gate-to-Source Leakage Current I GSS VGS =- -20V, VDS =0V - -1.0 nA Cutoff Voltage V GS (off) V DS =10V, ID =100µA - -2.0 - -3.0 - -5.0 V Drain Current I DSS VDS =10V, VGS =0V 40* 75* mA Forward Transfer Admittance yfs1V DS =10V, ID =10mA, f=1kHz 10 15 mS yfs2V DS =10V, VGS =0V, f=1kHz 22 30 mS Input Capacitance Ciss V DS =10V, VGS =0V, f=1MHz 11 pF Reverse Transfer Capacitance Crss V DS =10V, VGS =0V, f=1MHz 2.5 pF Noise Figure NF V DS =10V, Rg=1kΩ , ID =1mA, f=1kHz 1.5 dB Static Drain-to-Source On-State ResistanceR DS (on) I D =10mA, VGS =0V 30 Ω Marking : IJ * : Pulse Test Pulse Width≤2ms. * : The 2SK1740 is classified by IDSS as follows : (unit : mA). Rank 3 4 5 IDSS 40 to 52 48 to 63 57 to 75
No.4112-2/5 Package Dimensions unit : mm (typ) 7013A-011 ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA ID -- VDS Drain-to-Source V oltage, VDS -- mV Drain Current, ID -- mA 0 100 200 300 400 500 100 048 2 0 12 16 0 12345 ITR01960 ITR01961 ITR01962 ITR01963 V GS =0V --0.5V --1.0V --2.0V --2.5V--3.0V V GS =0V --0.5V --1.0V --2.0V --2.5V--3.0V --1.5V--1.5V VGS =0V --0.5V --1.0V --1.5V --2.0V --2.5V V DS =10V IDSS =75mA 55mA 40mA 1 : Source 2 : Drain 3 : Gate SANYO : CP 1.5 2.51.1 0.3 0.05 2.9 0.95 0.4 0.1 0.50.5
No.4112-3/5 Cutoff V oltage, VGS (off) -- V VGS (off) -- IDSS Drain Current, IDSS -- mA Drain Current, ID -- mA Forward Transfer Admittance, yfs -- mS yfs -- ID Drain Current, IDSS -- mA Forward Transfer Admittance, yfs -- mS yfs -- IDSS ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA Static Drain-to-Source on State Resistance, RDS (on) -- Ω R DS (on) -- IDSS Drain Current, IDSS -- mA yfg -- ID Drain Current, ID -- mA yig -- ID big, gig -- mS 048 1 2 1 6 048 1 2 1 6 yfg -- VDG Drain-to-Gate V oltage, VDG -- V bfg, gfg -- mS 048 1 6 12 bfg, gfg -- mS 100 23 5 7 10 23 5 7 100 2 ITR01968 ITR01969 ITR01970 ITR01971 IDSS =40mA 55mA 75mA --gfg bfg V DG =10V f=100MHz Common Gate ID =10mA f=100MHz Common Gate V DG =10V f=100MHz Common Gate --gfg bfg gig big V DS =10V f=1kHz --1.0 1007543 100 ITR01964 ITR01965 35 4 1007 34 5 7 100 ITR01966 ITR01967 V DS =10V f=1kHz V DS =10V IDSS =60mA Ta= --25 75°C V DS =10V IDSS =100µA ID =10mA V GS =0V yfs2(VGS =0V) yfs1(ID =10mA) Drain Current, ID -- mA
No.4112-4/5 yog -- f bog, gog -- mS 0 200 400 600 800 1000 0 400 200 600 800 1000 yig -- f Frequency, f -- MHz big, gig -- mS 0 200 400 1000 600 800 yfg -- f bfg, gfg -- mS 2.8 2.4 2.0 1.6 1.2 0.8 0.4 048 1 2 1 6 yrg -- VDG brg, grg -- mS ITR01976 ITR01977 ITR01978 ITR01979 ID =10mA f=100MHz Common Gate --brg --grg V DG =10V ID =10mA Common Gate --gfg bfg V DG =10V ID =10mA Common Gate gig gig V DG =10V ID =10mA Common Gate bog gog 2.8 2.4 2.0 1.6 1.2 0.8 0.4 1612840 yog -- ID bog, gog -- mS yig -- VDG Drain-to-Gate V oltage, VDG -- V big, gig -- mS 048 1 2 1 6 ITR01972 ITR01973 1.2 1.0 0.8 0.4 0.2 0.6 08 41 6 12 yrg -- ID brg, grg -- mS 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 04 8 1 2 1 6 yog -- VDG bog, gog -- mS ITR01974 ITR01975 ID =10mA f=100MHz Common Gate gig big V DG =10V , f=100MHz Common Gate bog gog ID =10mA f=100MHz Common Gate bog gog V DG =10V f=100MHz Common Gate --brg --grg Drain-to-Gate V oltage, VDG -- V Drain-to-Gate V oltage, VDG -- V Frequency, f -- MHz Frequency, f -- MHz Drain Current, ID -- mA Drain Current, ID -- mA
No.4112-5/5PS Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- mW Drain-to-Source V oltage, VDS -- V Ciss -- VDS Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Crss -- VDS Reverse Transfer Capacitance, Crss -- pF 52357 10231.0 yrg -- f Frequency, f -- MHz brg, grg -- mS 0 200 400 600 800 1000 ITR01980 ITR01981 300 250 200 100 150 0 20 40 60 80 100 160 120 140 1.0 1.0 23 5 7 10 23 5 ITR01982 ITR01983 V GS =0V f=1MHz V DG =10V ID =10mA Common Gate V GS =0V f=1MHz --grg --brg Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice.