2SK1729 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. + Very high-speed switching. + Low-voltage drive. + Meets radial taping. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss 100 v Gate to Source Voltage Voss £165 v Drain Current(DC) Ip 0.5 A Drain Current(Pulse) Ipp PWS 10ys, duty cycleS1% 2 A Allowable Power Dissipation Pp 1 Ww Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit D-S Breakdown Voltage Vesrpss Ip=1mA,Vgs=0 100 v [Feze Gate Voltage Ipss Vps=100V,Vgs=0 100 pA Drain Current Gate to Source Leakage Current Iggg Voes= £12V,Vps=0 £10 pA Cutoff Voltage Vesom Vps=10V,Ip=1mA 1.0 20 Vv Forward Transfer Admittance | Vis! = Vpg=10V,Ip=250mA. 400 700 mS [Stati Drain to Source Rpsion) Ip=250mA,Vgg=10V 27°35 on State Resistance Rpsion) Ip=250mA,Vgs=4V 3.2 4.2 a Input Capacitance Ciss Vps= 20V,f=1MHz 45 pF Output Capacitance Coss Vps=20V,f=1MHz 15 pF Reverse Transfer Capacitance Crsg Vps=20V,f=1MHz 3 pF Turn-ON Delay Time tacon) See specified Test Circuit. 5 Ds Rise Time ty ” 10 ns Turn-OFF Delay Time taom o 35 ns Fall Time te a 25 ns Diode Forward Voltage Vsp Is=500mA,Vgs=0 1.0 Vv Switching Time Test Circuit Package Dimensions 2087 25 (unit : mm) 1.65. s0v 7 ov Ip=250ma vin Au =2000 4 2] i dl 0.6 @ $ave er: D: Drain G: Gate SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 32593TH (KOTO) 8-7843 No.3824-1/3
lo_- Vos Ip _~- Ves Wi i ad | 400 LY ee | 0.8 a W gi 0+ i] Yy 4 asa pC i) A ee 2 2 100 i ee 02 I} ft | Ht hese] ¢ W 0 1 2 3 4 5 ° 1 2 3 “4 5 Drain to Source Voltage,Vps - V Gate to Source Voltage, Vas — V Ros(on) - Vos Rps(on) ~_T Ges WORPTETT) Yee |_| PCC , 8 gl NT TT Py a Ah 33 2 233 oe i, PPro] fl bet] gait | TT | rT | ey re | STP) fe % 2 4 6 8 10 12 wm 16 &o -40 oO 40 80 120 160 : Gate to Source Voltage, Vas — V Ambient Temperature,T, —°C ¥isl - Ip sWTime - Ip a 2 100 t Vps= 10V Vpp=50V ‘ DF) Pe EE o se TP SSE oo ere 2 +L Se E ZB evi], RAR a] TA Pt} og PS En ee eee ¢ ee ee g & lit Vt TT ee g Fa Drain Current,Ip — A Drain Currently — A , , Ciss, Coss: Crss_- Vos ASO Sa st rr <" 5 t+ AEES {| g —=_| U Mina KHIR > i peop tf a FP NISRA i N 5 I operation NOS | NTN tp limited by Rosin) NR} hae eee eet SRE EE pf | tJ Nee | Pe are LN ral YT yc tf oorswiepsin | TT TT TY Drain'té Source Voltagé,;Vpgs— V , Drain'to Source Voltage,Vpgs— V ! No.3824-2/3
. Pp - Ta 12 DB Ea i 21.0) Es pt Xt tT £08 ~ SCONE he \\ £04 NX e IN oO. IN 0 2 40 60 80 100 120 140 160 Ambient Temperature,T, —°C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may direotly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no Guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3824-3/3