2SK1727 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Low ON resistance. - Very high-speed switching. - Low-voltage drive. - Meets radial taping. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Voss 60 Vv Gate to Source Voltage Voss 415 Vv Drain Current(DC) Ip 0.8 A Drain Current(Pulse) Ipp PWS 10ys, duty cycleS1% 3.2 A Allowable Power Dissipation Pp 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit . D-S Breakdown Voltage Visrypss Ip=1mA,Vgs=0 60 Vv (Ze Gate Voltage Ipsg Vps=60V,Vgs=0 10 pA Drain Current Gate to Source Leakage Current Igsg Voes= £12V,Vps=0 £10 pA Cutoff Voltage Vosem Vps=10V,Ip=imA 1.0 20 Vv Forward Transfer Admittance | Yes | Vpg=10V,Ip=400mA 05 09 s [Seat Drain to Source’ Rpsion) [p= 400mA, Vgg=10V 09 12 9 on State Resistance Rpsion) Ip=400mA,Vgs=4V 12 16 a Input Capacitance Ciss Vps=20V,f=1MHz 45 pF Output Capacitance Coss Vps=20V f= 1MHz 22 pF Reverse Transfer Capacitance Cygg Vps=20V,f=1MHz 5 pF Turn-ON Delay Time taion) See specified Test Circuit. 5 ns Rise Time tr * 10 ns Turn-OFF Delay Time tacom a 30 ns Fall Time te a 20 ns Diode Forward Voltage Vsp Is=800mA,Vgg=0 1.0 Vv Switching Time Test Circuit package dimensions 2087 a 2.5 ‘unit : mm) 63 10 s0v 7 — ov Tp=400ma van AL=750 ¢ || QI > hall [[lo.s Pe a0 i D: Drain G: Gate ; 256 254 . . SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41093TH (KOTO) A8-7842 No.3822-1/3
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SS 8 limited by Rosen) SX d ie a es a PoP BS AN - || Single potee [TTT “oO 10 20 30 40 50 60 10. 10 ‘0 Drain'to Source Véltage, Vpg~— V Drain to SouresValtage,Vips—V ieee Noon V' Piaintenurestaingsoe-7 Mp No.3822-2/3
1,2 D. 1.0 é"TN Boa N Bos NI ' Bet TEN TO & 04 N 1 =, IN 0 20 40 wo C) 10 120 «140160 Ambient Temperature,T, -°C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD,, its affiliates, “subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3822-3/3