2SK1725 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Low ON resistance. - Very high-speed switching. - Low-voltage drive. - Meets radial taping. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vpss 30 Vv Gate to Source Voltage Vass #15 Vv Drain Current(DC) Ip 1 A Drain Current(Pulse) Ipp PWS 10zs, duty cycleS 1% 4 A . Allowable Power Dissipation Pp 1 Ww Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Vsrypss_Ip=1mA,Vgs=0 30 v (fe Gate Voltage Ipss Vps=30V,Vcgs=0 10 pA Drain Current Gate to Source Leakage Current Igsg Vos= £12V,Vps=0 £10 pA Cutoff Voltage Vosom Vps=10V,Ip=1mA 1.0 20 Vv Forward Transfer Admittance | ¥g| = Vpg=10V,Ip=500mA 06 1.0 Ss [Stati Drain to Source Rpsion) Ip=500mA,Vgg=10V 0.5 0.75 = on State Resistance Rpswon) Ip=500mA,Vgs=4V 0.75 11 a Input Capacitance Ciss Vps=10V,f=1MHz 50 pF Output Capacitance Coss Vps=10V,f=1MHz 35 pF Reverse Transfer Capacitance Cys Vps=10V,f=1MHz 10 pF Turn-ON Delay Time tacon) See specified Test Circuit. 5 ns Rise Time tr % 10 ns Turn-OFF Delay Time tam + 30 ns Fall Time tp * 20 ns Diode Forward Voltage Vsp Igs=1A,Vgs=0 1.0 v Switching Time Test Circuit Package Dimensions 2087 25 (unit: mm) ; ttle Vop=15V 6. |i y.0 ov Ip#500mA 0.c. $x 2 > Your = qh 0.6 @ asKi7e8 se 8 0.45 D: Drain G: Gate 2.S6. 2.54 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41093TH (KOTO) A8-7832 No.3820-1/3
2SK1725 . 100) 7 ea =_Vos 2.0 !p_- Vas ) 3.2 | gon We 4.0N. 1» gy. a's f whe | | i | °G 1 2 3 4 5 % + 2 3 4 Ss Drain to Source Voltage, Vps — V Gate to Source Voltage,Vas — V Ros(on) ~ Ves Roston) ~ Ta 1.6 lp =500mA’ 6 Tp =500mA\\ gta gia 8 a WN Bo. x BE 0.8 aL) Ss i] cp] BRox | gow — °%o 2 4 6 8 10 12 mw 16 86 40 i) 40 80 120 160 Gate to Source Voltage,Vgs — V Ambient Temperature,T, —°C a 1¥sl - Ip swWTime_- Ip TTT), oe — =11 store = Toe ; ese Sie |_ SAE | 2 POR eS £ Fe ee ee Bate PEE) * Gere O71 1.0 O17 1.0 Drain Currently — A Drain CurrentIp — A Cisss Coss, Crss_—- Vos ASO__ e he tet Poo RS a ee 2 fT) NoGtrN YT oe A ee E Operation Nal TIN] % 3 in this area is a é op ttf ST iimited by Rogoan Neel _| a a ne ‘3 <4 a i NS a eee a a feeee ON 2 a Beem | TTT Ty | 7 = ; : Drain to Source Voltage, Vs V Drain to Source Voltage,V pg 7” No.3820-2/3
2SK1725 . Pp - Ta 1.2 2 t 1.0 a), a fat XK TT s N eLIS ane 3. NI £04 NI S IN : TING <4 IN o 7 4 © 6 im 120 “0 160 Ambient Temperature,T, —°C MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss . Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3820-3/3