2SK1663L FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
2SK1663-L,S FUJI POWER MOS-FET SS EEE ae eS N-CHANNEL SILICON POWER MOS-FET F I Ss E R | ES @ Features MOutline Drawings @High speed switching : @ Low on-resistance @ No secondary breakdown ot a 25:02 © Low driving power i reat co @ High vol i =a igh voltage 20 Fi ] > i fad st . | ie : ojo ld els 3 @ Applications ae ne — | © Switching regulators = cat? oT | ee euPS aseio2 tet, 20g @DC-DC converters vroare © General purpose power amplifier L—type S~type EIAJ — Mi Max. Ratings and Characteristics @Absolute Maximum Ratings(Tc= 25°C) W Equivalent Circuit Schematic Items | Symbols | Ratings | Units : Drain-source voltage 800 | - Continuous drain current 3 A Drain (D) Pulsed drain current 12 A Continuous reverse drain current | Ia | 3 A Gate-source peak voltage Vv o! Max. power dissipation 80. Ww Gate (G) Operating and storage 150 °c Source (S) temperature range =55~ +150) ‘C @Electrical Characteristics(Te= 25°C) Items [ Symbols [Test Conditions —«T Min. | Typ. | Max. | Units Drain-source breakdown voltage Ip=imA__Ves=0V 800 | V Gate threshold voltage Ib=10mA___ Vos=Vos 3.0 4.0 vi Zero gate voltage drain current Vos =800V oo 05 mA “SiO gate Voltage dain cur Ves=0V mA Gate-source leakage current Ves=£20V_ Vos=0V [ [10 F100 nA Drain-source on-state resistance In=1.5A_Vos=10V [30 [40 Q Forward transconductance [| gn | _Iw=1.5A Vos =25V [2.0 | 4.0 | s Input capacitance Vos =25V [90071400 Output capacitance Vos=0V [ [90 [140 ) pF Reverse transfer capacitance f =IMHz [35 60 Turn-on time tor Vec=30V Ip=2.1A |__| 20 30 (ton = tayon + ts) Ve=l0vV 40 ns Turn-off time tor, tdiown Re=s0n (tore=tuom tty) te a a a | Diode forward on-voltage | Vso [T= 2X Toy Ves=0V_Ta=25C_ [| 1.0 | 1.35] V Reverse recovery time [ite | T= To, did =100A7us T= 25C | -+| 400] ~~ ns @Thermal Characteristics items [ Symbols | __ Test Conditions ———+|~‘Min._| Typ. | Max. ] Units «cen Ruyex-a | channel to air a A ‘Thermal resistance Rugnn | channel to case A2-239
FUJI POWER MOS-FET 2SK1663-L,S a Oe MOS Fer RN OSS Wi Characteristics i/o ee “TE ov Ae ‘ — 5/7 aca IEAEEREUREEERAEOPZO1
17 Zann COT ee PT
HA ES MERRRREND EAN? Zan Ranh ©» ECE EE woe TTT Lere CLL TT @ pe @ es a PSE besa JOOC co TT ALOT UOT oO 20 40 60 50 0 50 100 BO Vos CV) Ten CC) Typical Output Characteristics On State Resistance vs. Ton 6 5 a im rT] Loom pee Ti Ser Coon Here +] roy COCO ney Sees eee aaa Co Het eee SH COO Lees ii bo Vo LLL (ae ew CECE eee i == Seah » CCP a i Rosen SUBSeEenEn zu] a > Co @ OCC CoC mea cH Recto at (red FBO we pulse test, 4 | cl tee2 5 Boge ee COOP TT Cl (n/a ECC EEE ET Ves(V) Ip(Al Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. |,, ‘CO 7ese LLL meee ey aay ap SCLLL Times trate eras] He | He jaan coo ‘ee Nan Hee Auanass sAORURBAEREIOND AEA Coe Af Vso preset eT on ao am ow OTTER igen ce Coo fP—H- FH SAA AAAAOKAAAMAANIL | AASPHIOGELAAESTADEAENA IpfA) Ten COD Typical Forward Transconductance vs. |) Gate Threshold Voltage vs. Ten A2-240
2SK1663-L,S FUJI POWER MOS-FET — ee O eee NGG i cool A
0 BSS SESS SSE cae PA fy
Soppeeeoenseaseeenes| SRE EE 4 CEE Ree eA SEE os On cw WERT). i gee —. RSS SSS SE cone] [ZS ov (nF) sesnseccccesesessaas Mo Bean veov —], WY) FERRERS ESS eel A CO 7 Nee iy eT TTT] (CSS ° 10 20 30 40 0 0 20 30 40 50 Vos(V) Qg(nc) Typical Capacitance vs. Vos Typical Input Charge Leight sis eee TTT] ™ ed a == ae SSS | a LIEN TT [TPT] COP COOP FRR SRE EEE Het sot a a Py 40 IN a ee eee w [TLE NGGEE wT LLP se Co Ere ALOT) Ven lV) Te('°C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T. orf ee] Ssiiteeeeeetitine acer eS Sd Siesta R Se | Ao Set Set Sta he f5Stii er ene — 9 aie ee nae | lo Vom t (Ved? = 0.01 com Esc iiiFTRe err cq ELreese CoAT Hn IC il hie Nt Sear os Se seaee:: Lf Tt last Pere OOS EAH | aot Oe T = Eee seteo Hae Fase op CU Ty ii Tt, RES u(S) Vos(V) Transient Thermal Impedance Safe Operating Area A2-241
L COAFOTOWE ROKR HME FF ADA MEE) BM ROMMEHO Ro, x ALONE £1) HID F < BHENSIEMHVET, COAFOTIBMMENTOS MR EKA ENS BAL, TONROMMMBO LMHS AF LT, F— BEMERLTOR ED.
2 PAF OPCML TH SIMMS, HLM EKA LARAMHSEOAMERMTSEOTHD, KAP OTC LoCLRAT
He, FORMA O RACING 5 RAE S 2 LAMM AEE 17 I BOTS RA, 3. PLAMICA THRO BR CBMEOW LICH TORT. LPL, HUMANS SHER TRIMS SORE ORT, SERA EM ARLE OMIA, RL CAR HR, ARI ESM T BING ANCES AM KIARA, WMOLLALAT, MILA & EREMROKWO FEM TCE SED, 4. PAFOACBMMET ISNA, PMOGMECMBRENSPRLOLI SRT MHCUAMBICEMEHSI CF BAL TASH TET, sayeta-e OAR + MIS eR (ie) + aT URES + Cea HOF AA 2 TLE + REMI RR Ne DPR (ERA bh GE 5. PAF OAAMOMIAE, THORS CUI MEE OL RANG SRBC MS OP EOS CS, WTR LS MMOL, TREBTC RED, CO AF OFONMECNSOMMICMAT Sli, SIMA SAAB RRB ANS At RAL TE, MBAMMMEL OKI So IT aT VAF ABE, REMODEL DOMMG FLERE SOL AMM, + BRS CIR, Aas E) + SAR FES a + EE SRS
0 HAMAR USA WFR / Bie Ret + BEMIRO 722 0S AT
- BUD TR MEMIEA DORE NS PRO KS GIB, AF TIIRONMEMAL OTK BE + Fae + AS RRS + DAF Fat OR ES URS PRS + BER a TD RAFOZO—MBE KILL MOWAPIM IS UV TIS, MBN LS MHORMALR TH, B LOAF OSONEICOAMOMAHO ELS. BUEN SHIM ATR AIL, SOMIECMATMIL TS BE. AUER 2 OTR BOM ILE ats SAUER E Z OWE PHES A BO TSH RRA, atest RFREAB + NTE MEW AUR OPERAIEAD a (03) 5388-7657 MAM AES me (06) 455-6467 F151 RAMS ROT B308sS B (03) 5388-7681 AER B (0764) 41-1231 ‘avy EL) WEABMR co (09) 5908-7680 aR (0878) 51-0185 @ (03) 5388-7651 KYZRA « m (0263) 26-6740 PARAM RAMM| me (052) 204-0295 moKeRAB «— me (03) 5988-7685 ANTM RMEM MES (092) 731-7192 a