2SK1657-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK1657 ■ Features
- VDS (V) = 30V
- ID = 0.1A
- RDS(ON) ＜ 45Ω (VGS = 2.5V)
- RDS(ON) ＜ 25Ω (VGS = 4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±7 Continuous Drain Current ID 100 Pulsed Drain Current (Note.1) IDM 200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±3V ±5 uA Gate Cut-off Voltage VGS(off) VDS=3V ID=1uA 0.9 1.5 V VGS=2.5V, ID=10mA 45 VGS=4V, ID=10mA 25 Forward Transconductance gFS VDS=3V, ID=10mA 20 40 ms Input Capacitance Ciss 15 Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 1.5 Turn-On DelayTime td(on) 95 Turn-On Rise Time tr 360 Turn-Off DelayTime td(off) 160 Turn-Off Fall Time tf 150 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=3V, VDS=3V, ID=10mA, RL=300Ω,RG=10Ω VGS=0V, VDS=3V, f=1MHz ns ■ Marking Marking G19 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1657 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1657 ■ Typical Characterisitics