2SK1590-HF KEXIN

Document overview

www.kexin.com.cn 1 MOSFET ■ Features

VDS (V) = 60V
ID = 0.2 A
RDS(ON) ＜ 3Ω (VGS = 10V)
RDS(ON) ＜ 6Ω (VGS = 4V) 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.2 Pulsed Drain Current (Note.1) IDM 0.4 Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=5V , ID=1uA 0.8 1.8 V VGS=10V, ID=10mA 3 VGS=4V, ID=10mA 6 Forward Transconductance gFS VDS=5V, ID=10mA 20 65 mS Input Capacitance Ciss 26 Output Capacitance Coss 20 Reverse Transfer Capacitance Crss 4 Turn-On DelayTime td(on) 50 Turn-On Rise Time tr 140 Turn-Off DelayTime td(off) 200 Turn-Off Fall Time tf 190 Static Drain-Source On-Resistance VGS=0V, VDS=5V, f=1MHz pF ns Ω VGS(on)=5V, VDS=5V, ID=10mA,RL=500Ω,RG=10Ω RDS(On) ■ Marking Marking G16 F
Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET 2SK1590-HF

www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics N-Channel MOSFET 2SK1590-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics N-Channel MOSFET 2SK1590-HF