2SK1590-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK1590 ■ Features
- VDS (V) = 60V
- ID = 0.2 A
- RDS(ON) ＜ 3Ω (VGS = 10V)
- RDS(ON) ＜ 6Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.2 Pulsed Drain Current (Note.1) IDM 0.4 Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=5V , ID=1uA 0.8 1.8 V VGS=10V, ID=10mA 3 VGS=4V, ID=10mA 6 Forward Transconductance gFS VDS=5V, ID=10mA 20 65 mS Input Capacitance Ciss 26 Output Capacitance Coss 20 Reverse Transfer Capacitance Crss 4 Turn-On DelayTime td(on) 50 Turn-On Rise Time tr 140 Turn-Off DelayTime td(off) 200 Turn-Off Fall Time tf 190 Static Drain-Source On-Resistance VGS=0V, VDS=5V, f=1MHz pF ns Ω VGS(on)=5V, VDS=5V, ID=10mA,RL=500Ω,RG=10Ω RDS(On) ■ Marking Marking G16 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1590 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1590 ■ Typical Characterisitics