2SK1589_15 KEXIN

Document overview

www.kexin.com.cn 1 MOSFE T N-Channel MOSFET 2SK1589 ■ Features

VDS (V) = 100V
ID = 0.1 A
RDS(ON) ＜ 30Ω (VGS = 4V)
RDS(ON) ＜ 25Ω (VGS = 10V) 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 100 Pulsed Drain Current (Note.1) IDM 200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 100 V Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±1 uA Gate Cut-off Voltage VGS(off) VDS=5 V ID=1uA 0.8 1.8 V VGS=4V, ID=10m A 30 VGS=10V, ID=10m A 25 Forward Transconductance gFS VDS=5V, ID=10m A 20 38 mS Input Capacitance Ciss 16 Output Capacitance Coss 12 Reverse Transfer Capacitance Crss 3 Turn-On DelayTime td(on) 17 Turn-On Rise Time tr 10 Turn-Off DelayTime td(off) 68 Turn-Off Fall Time tf 38 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=5V, VDS=5V, ID=10mA, RL=500Ω,RG=10Ω VGS=0V, VDS=5V, f=1MHz ns ■ Marking Marking G17

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1589 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1589 ■ Typical Characterisitics