2SK1587-HF KEXIN

Document overview

www.kexin.com.cn 1 MOSFET ■ Features

VDS (V) = 16V
ID = 2 A
RDS(ON) ＜ 0.5Ω (VGS = 4V)
RDS(ON) ＜ 0.8Ω (VGS = 2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 Gate-Source Voltage VGS ±16 Continuous Drain Current ID 2 Pulsed Drain Current (Note.1) IDM 4 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 16 V Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±5 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=1mA 0.8 1.6 V VGS=4V, ID=1A 0.5 VGS=2.5V, ID=0.5A 0.8 Forward Transconductance gFS VDS=5V, ID=1A 0.4 S Input Capacitance Ciss 180 Output Capacitance Coss 160 Reverse Transfer Capacitance Crss 55 Turn-On DelayTime td(on) 100 Turn-On Rise Time tr 700 Turn-Off DelayTime td(off) 150 Turn-Off Fall Time tf 200 Static Drain-Source On-Resistance VGS=0V, VDS=5V, f=1MHz pF ns Ω VGS(on)=3V, VDS=10V, ID=1A,RL=10Ω,RG=10Ω RDS(On) ■ Marking Marking NF F
Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET 2SK1587-HF

www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics N-Channel MOSFET 2SK1587-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics N-Channel MOSFET 2SK1587-HF