2SK1585_15 KEXIN

Document overview

www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK1585 ■ Features

VDS (V) = 16V
ID = 1 A
RDS(ON) ＜ 1Ω (VGS = 4V)
RDS(ON) ＜ 1.2Ω (VGS = 2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 Gate-Source Voltage VGS ±16 Continuous Drain Current ID 1 Pulsed Drain Current (Note.1) IDM 2 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 16 V Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±5 uA Gate Cutt-off Voltage VGS(off) VDS=5V , ID=1mA 0.8 1.6 V VGS=4V, ID=0.5A 1 VGS=2.5V, ID=0.5A 1.2 Forward Transconductance gFS VDS=5V, ID=0.5A 0.4 1 S Input Capacitance Ciss 116 Output Capacitance Coss 107 Reverse Transfer Capacitance Crss 27 Turn-On DelayTime td(on) 80 Turn-On Rise Time tr 260 Turn-Off DelayTime td(off) 145 Turn-Off Fall Time tf 140 Static Drain-Source On-Resistance VGS=0V, VDS=3V, f=1MHz pF ns Ω VGS(on)=3V, VDS=3V, ID=0.5A,RL=6Ω,RG=10Ω RDS(On) ■ Marking Marking NE

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1585 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1585 ■ Typical Characterisitics

www.kexin.com.cn4 MOSFE T N-Channel MOSFET 2SK1585 ■ Typical Characterisitics