2SK1584-HF KEXIN

Document overview

www.kexin.com.cn 1 MOSFET ■ Features

VDS (V) = 30V
ID = 0.5 A
RDS(ON) ＜ 1.5Ω (VGS = 10V)
RDS(ON) ＜ 2Ω (VGS = 4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.5 Pulsed Drain Current (Note.1) IDM 1 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=0.1mA 1.3 2.5 V VGS=10V, ID=0.3A 1.5 VGS=4V, ID=0.3A 2 Forward Transconductance gFS VDS=5V, ID=0.5A 350 440 mS Input Capacitance Ciss 60 Output Capacitance Coss 50 Reverse Transfer Capacitance Crss 9 Turn-On DelayTime td(on) 80 Turn-On Rise Time tr 270 Turn-Off DelayTime td(off) 100 Turn-Off Fall Time tf 110 Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF ns Ω VGS(on)=4V, VDS=10V, ID=0.3A,RL=33Ω,RG=10Ω RDS(On) ■ Marking Marking NH F
Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET 2SK1584-HF

www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics N-Channel MOSFET 2SK1584-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics N-Channel MOSFET 2SK1584-HF

www.kexin.com.cn4 MOSF ET ■ Typical Characterisitics N-Channel MOSFET 2SK1584-HF