2SK1583-HF KEXIN

Document overview

www.kexin.com.cn 1 MOSFET ■ Features

VDS (V) = 16V
ID = 0.5 A
RDS(ON) ＜ 1.5Ω (VGS = 4V)
RDS(ON) ＜ 2Ω (VGS = 2V) 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 Gate-Source Voltage VGS ±16 Continuous Drain Current ID 0.5 Pulsed Drain Current (Note.1) IDM 1 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 16 V Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±5 uA Gate Cutt-off Voltage VGS(off) VDS=5V , ID=1mA 0.8 1.6 V VGS=4V, ID=0.3A 1.5 VGS=2.5V, ID=0.3A 2 Forward Transconductance gFS VDS=5V, ID=0.3A 400 550 mS Input Capacitance Ciss 60 Output Capacitance Coss 70 Reverse Transfer Capacitance Crss 15 Turn-On DelayTime td(on) 95 Turn-On Rise Time tr 360 Turn-Off DelayTime td(off) 160 Turn-Off Fall Time tf 150 ns Ω VGS(on)=3V, VDS=10V, ID=0.3A,RL=33Ω,RGEN=10Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=5V, f=1MHz pF ■ Marking Marking ND F 1.Gate 2.Drain 3.Source N-Channel MOSFET 2SK1583-HF
Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics N-Channel MOSFET 2SK1583-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics N-Channel MOSFET 2SK1583-HF

www.kexin.com.cn4 MOSF ET ■ Typical Characterisitics N-Channel MOSFET 2SK1583-HF