2SK1582-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK1582 ■ Features
- VDS (V) = 30V
- ID = 0.2 A
- RDS(ON) ＜ 5Ω (VGS = 4V)
- RDS(ON) ＜ 3Ω (VGS = 10V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 200 Pulsed Drain Current (Note.1) IDM 400 Power Dissipation Ta = 25℃ PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±1 uA Gate Cut-off Voltage VGS(off) VDS=5 V ID=1uA 0.8 1.8 V VGS=4V, ID=10m A 5 VGS=10V, ID=10m A 3 Forward Transconductance gFS VDS=5V, ID=10m A 20 60 mS Input Capacitance Ciss 28 Output Capacitance Coss 30 Reverse Transfer Capacitance Crss 7 Turn-On DelayTime td(on) 55 Turn-On Rise Time tr 200 Turn-Off DelayTime td(off) 180 Turn-Off Fall Time tf 250 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=5V, VDS=5V, ID=10mA, RL=500Ω,RG=10Ω VGS=0V, VDS=5V, f=1MHz ns ■ Marking Marking G15 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1582 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1582 ■ Typical Characterisitics