2SK1581-3 KEXIN

Document overview

www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK1581 ■ Features

VDS (V) = 16V
ID = 0.2 A
RDS(ON) ＜ 5Ω (VGS = 2.5V)
RDS(ON) ＜ 3Ω (VGS = 4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 Gate-Source Voltage VGS ±16 Continuous Drain Current ID 200 Pulsed Drain Current (Note.1) IDM 400 Power Dissipation Ta = 25℃ PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 16 V Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±3V ±5 uA Gate Cut-off Voltage VGS(off) VDS=3 V ID=10uA 0.8 1.6 V VGS=2.5V, ID=1m A 5 VGS=4V, ID=1m A 3 Forward Transconductance gFS VDS=3V, ID=10m A 20 70 mS Input Capacitance Ciss 27 Output Capacitance Coss 37 Reverse Transfer Capacitance Crss 8 Turn-On DelayTime td(on) 100 Turn-On Rise Time tr 300 Turn-Off DelayTime td(off) 210 Turn-Off Fall Time tf 240 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=3V, VDS=3V, ID=10mA, RL=300Ω,RG=10Ω VGS=0V, VDS=3V, f=1MHz ns ■ Marking Marking G14 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1581 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1581 ■ Typical Characterisitics