2SK1578 SANYO
Document overview
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Technical content
No.4178A 2SK1578 lik N-Chi 1 Juncti ‘ET Ss A! NYO annel Junction F! Capacitor Microphone Applications Features | - Especially suited for use in audio, telephone capacitor microphones. - Excellent voltage characteristics. - Excellent transient characteristics. - Adoption of FBET process. Absolute Maximum Ratings at Ta=25°C unit Gate-to-Drain Voltage Vapo —20 v Gate Current Ig 10 mA Drain Current Ip 1 mA Allowable Power Dissipation Pp 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit G-D Breakdown Voltage Vpryapo Ig=—100pA —20 Vv Cutoff Voltage Vest Vpg=5VIp=1pA -02 -06 -15 V Drain Current Ipss Vps=5V,Vgs=0 100K 800K pA Forward Transfer Admittance | ¥—1 Vps=5V,Veg=0, f=1kHz 04 12 mS Input Capacitance Ciss Vps=5V,Vgs=0, f= 1MHz 41 pF Reverse Transfer Capacitance Crss Vps=5V,Vgs=0, f=1MHz 0.88 pF XX : The 2SK1578 is classified by Ipgg as follows : (unit : pA)
100 A 170 150 B 240 210 C 350 320 D 480 440 E 800
[Ta=25°C, Voc =4.5V,RL=1kQ,Cjy = 15pF See specified Test Circuit.] min typ max unit Voltage Gain Gy Vin=10mV, f=1kHz —3.0 dB Reduced Voltage Characteristics AGyy Vin=10mV, f=1kHz ~12 -35 dB Voo=4.5 > 1.5V Frequency Characteristics AGyy f=1kHz to 110Hz -10 dB Input Resistance ZN f=1kHz 25 MQ Output Resistance Zo f=1kHz 700 Q Total Harmonic Distortion THD Vin=30mV, f=1kHz 1.0 % Output Noise Voltage Vno Vin=0,A curve -110 dB Test Circuit Package Dimensions 2034A (unit : mm) Voltage Gain a Frequency Characteristics Inp——— 18.0 - Distortion E el Reduced Voltage Characteristics Ce 3 — i 1? 1ka 9—— Vec=4,5V en 2 =", vege sv 4 i SSP iy. H * ~~ . 2: Gate © ‘3 : © 9 aes 3: Drain Loi r NYO: SPA ose | ve Fito Output Impedance rh a moth oh SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72297TS (KOTO)/12094TH(KOTO) 8-7215 No.4178-1/4
- ~ Vv 500 Ip Vos. 500 Ip DS
8 Vgs=0v 3
Z | , Pe | Pe a | rr ——— oo ——eEE—e ; C) 2 4 6 8 10 ° Drain-to-Souree Voltage, Vog -4 ° Drain-to-Source Voltage,Vps — V Ip - Ves Ip_- Ves Te CC 8 8 Pt Ey td Ee oo, 60 9 ‘ a SOS wh wtf —\\m aor, 1 ; Gate-to-Source Voltage, Ves — V Gate-to-Source Voltage, Vgs — V L¥is | -_ loss Ves(off) - Ipss oe a es ee gs Ee ili] ober) og oer = 1.0 a a | : Se Viper pte tT é Po , € B 2 elit [i ) tit | 3 Pit] J] Uy E 100 Tyo 2 a 10 : 5 10 2 Drain Current, Ings — vA Drain Current, Ipgg — vA ; Ciss - Vps Crss - Vos ¥ BL atti Tt prop PH eee : a i _ 5 a PHP PES s/i/ |] Ti] Tt) : Zz fe] tot TTyT yy eee ee i ine 1.0 10 * 01 10 , 5 T9 2 Drain-to-Source Voltage, Vpg — V Drain-to-Source Voltage, Vps — V __"° DaintoSourceVoltage Vos=V "rain te Source Voltage, Vg —Vo No.4178-2/4
AG -_Ipss Su aie 8 2 Gay SG STBVSIBV Pr Yeorin in Vin=10mV Gv Yoce Tw i vine 8 ere 2 pss: Vos=5.0V CesT Wa é |
3 LL A :
&-4 7 £ | Hy bo 3 | [7 i. ° ba -a : | | | cn L a ” T : “ : m Drain Current, Ipgg — uA Drain Current, Ipss — HA rons = HD — Ipss 6 Rowse t THD: Voo=4aV IN Vigsjon NY vege . Mite toast Ate oy ! Ipss: Vos=5.0V gm | e tt fl @ @ g j N32 : i, i | iw Fe ee A 28 2, | | * 6, 7 100 ~ 10 ‘© incon oe Drain Current, Ipgs — #A Drain Current, Ings — HA nurant Ibn Zo = loss “0 Wno: Veo=4av ™ : 70 YE Toon NO" ViSO, Acurve Vin=lémV a Vso, Ae rile Ey vee: Hunt oke Ipss: Vos=5.0V y m2 ; og 6@ ; ——} =114) , FE 3 /
4 B-16
i T Pf) i E Fy s &-18 ea 7120, 100 1000 . ‘S is Drain Current, Ings — HA Drain Current, Ings — KA coe THD - Vin 120, ue e || || oe fH Neaey TT 4 1 "ipss: Vos=5.0V Ea é € |_| N & > ad nae |e Zan A Zeer oie ' Zz — FJ TEN | i A471 Zz V4 Fe NL = 4 B20) NI ° < % 20 40 60 60 100 120 140-160 “© aput VoltageVy-—-mV Ambient Temperature,Ta — °C Vay — Input Voltage, Vin nad
a Mo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTO., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and alt claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or | - litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Bi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and ‘reliable, but no guarantees are made or implied regarding its use ‘or any infringements of intellectual property rights or other rights of third parties, This catalog provides information as of July, 1997, Specifications and information herein are subject to change without notice, . eee ~No.4178-4/4