2SK156 SANYO
Document overview
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Technical content
A SILICON N-CHANNEL JUNCTION-TYPE FIELD EFFECT TRANSISTOR a FOR CONDENSER MICROPHONE IMPEDANCE CONVERSION SANYO ABSOLUTE MAXIMUM RATINGS/Ta = 25°C unit Drain-gate voltage VpGo 20 Gate current Ig 10 mA Allowable power dissipation Pp 100 mw Junction temperature Tj 125 °C Storage ambient temperature Tstg —40~+125 °C ELECTRICAL CHARACTERISTICS/Ta = 25°C min typ max unit Drain current Ipss* Vps=10V 0.06* 15* mA [Ta = 25°C, Vec =4.5V, Rp = 680 ©, Cin = 15 pF, in specified test circuit (conforming with application circuit)] min typ max unit Transmission loss voltage-drop 4Gyv Vee = 4.5 ~ 1.5 V, f= 1 kHz -3 dB * characteristics Transmission loss frequency AGyt f=1k ~ 110 Hz, Vin = 10 mV -1 dB characteristics Input impedance Zin f=1kHz 20M Q Output noise voltage VNO Vin = 0, A-curve —110 dB * 2SK156 is graded as follows by drain current Ipss: D ed poet Tea - a 280° $52 | 45a ~ Goo , \\ bo - fF ige ? ; { Equivalent circuit D : Case Outline 2001 (unit: mm) 20 0.3 id rm 0.35 tt TR tn 33 aot St 5 {ie== 045 jt c |
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SANYO: SP D: Drain G: Gate S: Source These specifications are subject to change without notice. TOKYO SANYO ELECTRIC CO.. LTD. SEMICONDUCTOR DIVISION 15-13. 6-CHOME. SOTOKANDA. CHIYODA-KU, TOKYO 10! JAPAN -1-