2SK1549-R FUJI
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DEVICE NAME : Power MOSFET TYPE NAME H 2SK1549-R SPEC. No. i Fuji Electric Co.,Ltd This Specification is subject to change without notice. [enna pore Fuji Electric Co.Ltd CHECKED!" z a - il A : .- Vi = Y 0257-R-004a
- Scope This specifies Fuji power MOSFET 2SK1549-—-R 2. Construction N-channel! enhancement mode power MOSFET : 3. Application for switching 4. Outview T0-3PF Outview See to 4/10 page _ 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) fortinnstcinaren [ie | == pal fasion rr cesta [Po | | wd 6. Electrical characteristics at Tc=25°C (unless otherwise specified) Static ratings Description Symbo! Conditions Pre [im | me | Drain-source lo =ImA breakdown voltage | BVoss | Vos=0V 250 Vv Gate threshold To =10mA voltage | Ves(th) | Vos=Vas 2.1 3.0 4.0 Vv drain current Ves= OV Gate-source Vos=+20V leakage current Vos= OV nA Drain-source on- lo =10A state resistance | Ros(on)| Ves=10 V 0.15) © g y Fuji Electric Co,Ltd. g . ; vA o eo Y 0257-R-003a
Description Symbol! Conditions Unit ce Forward lo =10A transconductance | g fs Vos=25 V 15.0 Ss Vos=25V f =1MHz Reverse transfer capaci tance Crss 110 200 pF ce Turn-on time Vee= 30V lo = 3A Turn-off time [a Te Te | Reverse diode Description Symbo! Conditions Pain [ve [me Diode forward tbe =2X lor - on-vol tage Vso Ves=0V, Ten=25°C 1.7 Vv Reverse recovery le =lor . time tee Vos=0V 250 : ~dl/dt=100A/us Reverse recovery Ten=25C charge 2 ue T. Thermal resistance Description Symbol Conditions Unit Pe [im | Cc a IZ Therma! resistance a i 7S Fuji Electric Co,Ltd. 3 /., EA Y 0257-R-003a
TYPE : 2SKI549-R 15.540.5 8 50. &3 a 12. 9 3.2°83 “05 a io T | " fo} ( AS t # US al 2 Trade mark | q Q Type name | &S wy) 3 skib4g | 3] | § 7 a Lot No. Gi M4 i a H Y | 16203 WIA Bh oert03 €
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: H i i Pre-Solder i 118 0.6 "82 Oo O © ; CONNECTION @ GATE @® DRAIN ® source DIMENSIONS ARE IN MILLIMETERS. Fuji Electric Co,Ltd. g Ko pr Y 0257-R-003a
PD=f (TC) 100 & : : i 8 i i : i () 38 100 150 ; To) . - “Safe operating area . : ID=£ (VDS) :D=0.01, Te=25°C . 10? a De eennnne ens! SY SSE ON : as a “S.\\ilous | z aw ie an Hi | a DON, DN { : ee ! : KOON! shins ; : Se sins : 5 \\ hone 4 : : Org 10% 107 10? vos 3 57 Fuji Electric Co,Ltd. g ; WA co EF] Y 0257-R-003a
Typical output characteristics ID=f(VDS):804s pulse test, Tch=25'C 20 : : : . 40 SR Fi wey: : . z : : : A : : i) : ‘ xv f : : i ; : : 4.5V 40 5 | rr rr ene ree : a : : wv ty : : y : : . 4 : . 0 18 20 30 Typical Transfer Characterisic. ' ID=f(VGS):804s pulse test, VDS=25V, Tch=25°C z : B . 5 Q ; 9 5 10 . VWSsM Fy | . : = 6/0 Fuji Electric Co,Ltd. g vA oF . Y 0257-R-003a
gfs=f(1D):80u4s pulse test, VDS=25V, Tch=25°C [| a A rr re 8 ; : : : : Q 10 20 30 40 3 5 DA . y Typical Drain-source on-state resistance i RDS(on)=f(ID):80us pulse test, Tch=25'C ; : : | : | . = : : | : i 5 : : 5 : , 4 ¥ we _—— rT as : : : : U) 10 20 3% 40 “DA S |] Fuji Electric Co,Ltd. é tA uji Electric Co. g 10 : . Y 0257-R-003a
Drain-source on-state resistanse RDS (on)=f (Tch) : ID=10A, VGS=10V a4 : 8 : : : typ. ; a2 ee ar ae : : : -50 9 38 100 150 . Teh (0) ° Gate threshold voltage . ‘ VGS (th)=f (Ich) : VDS=VGS, ID=10mA . B) : ene Yn . . Meee : : typ. a : : : ~50 (} 58 100 150 Teh (*C) . . g g/ EA Fuji Electric Co,Ltd. g vA oO EE] Y 0257-R-003a
Typical gate charge characteristics VGS=f (dg) : 1D=20A, Tch=25°C 250 20 : : : : Sav . . . . 1 2S¥ : : : : : Jeeav “| We Lower ceee TB ] 20 40 6a 80 100 Qg tr) _ ! Typical capacitances i C=f (VDS) : VGS=0V, f=1MHz | 104 : : : Ciss i | : : : i eo : ~ : Coss 40° : : : 9 10 28 3 40 vos g ay EA Fuji Electric Co,Ltd. g VA 0 FO Y 0257-R-003a
Farward characteristic of revese diode IF=f(VSD):80us pulse test, VGS=0V 105 7 zg : : K i : 102 : : 00 10 2.0 3.0 . . VSD . i i i Transient thermal . ; impedance Zthch-c=f(t) _parameter:D=t/T . 10 y : : : : : i Ff ch Soe n es " 3 : : : sol i i 7 : : 405 40° 107 40% 1074 10° 4a g of a - Electr lt g ¥ Fuji Electric Co,Ltd. ee iO FE Y 0257-R-003a