2SK1505-MR

2SK1505-MR FUJI

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2SK1505-MR FUJI POWER MOS-FET N-C 4ANNEL SILICON POWER MOS-FET F lll Ss E R | ES Outline Drawings @ Features 98 — 10105 _ 25102 @ High current po] 328 i? @ Low on-resistance | Spy cr @Nc secondary breakdown Oe wtf al ee @Low driving power s s @ High forward Transconductance :| aaa Applications : eer te i G26 ° San ®@ Motor controllers 3 | Source @ General purpose power amplifier j howe al os? ®@DC-DC converters esas? L 2o0.02 Lf ere SC MMax. Ratings and Characteristics Equivalent Circuit Schematic @Absolute Maximum Ratings(Tc= 25°C) __ Items Symbols | Ratings | Units eee —Daain-source voltage | Voss [0 —C¢ntinuous drain current | Ip [35 A - __ Pulsed drain current. Inouss | 40 | A Drain(D) —Cotinuows reverse drain current] Tor 0 {85 TA — Mix power dissipation | Pp | 40 TW Gate(G) Ojerating and storage Ten | 150 teinperature range Tae =55~ +150; "C Source(S) @Electrical Characteristics(Tc= 25°C) oo a Ttems | Symbols |" Test Conditions| “Min. | Typ. | Max. | Units __Diain-source breakdown voltage | Vinawss | In=ImA_Ves=0V.=«d 8. fv ~~ Gitte threshold voltage Vosim) | Ip=lmA_Vos=Ves_ SiO 15 [25 | Vv _ Be gate voltage drain current | Ios Ves=0V i Tne lSC To [02 | 10 | mA _—Gite-source leakage current_| Iss | Ves=£20V Vns=0V | 000 Sn Drain-source on-state resistance | R oStr oA Vos=4V_ ft .029 0.0371 __ _ ee _ | Tos 175A" Ves =10V . 0.016 0.022] _Fifward transconductance | ga | I= 173A Vng=28V) spa fo fs __In put capacitance | Cis | Vs =25V. [1750 | 2630 Output capacitance | Cos | Vas =0V | 300 | 1200 | pF __Reverse transfer capacitance | Crs | f=IMHz ee _|_ 400 i Turn-on time ton, toon = - | 25 | 38 allotted |) Veer Ine a a0 50 ____ (taorm +t) ne ‘1807/2370 —Dirde forward on-voltage | Vs» | Is=2XIox Vos=0V Teax=a5C | 135] 200) Reverse recovery time ter In=Ipr_ d/h =100A/us Ten = 25°C 100 ns @Th 2rmal Characteristics Items [Symbols [Test Conditions | Min. | Typ. | Max, | Units ‘ Rinen-a) | channel to air 62.5 | °C/W ‘mal Resi ene rr a ea A2-213

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