2SK1503-01 FUJI

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. ro Q Fuji power MOSFET Specification 2SkK1s5S03—0 1 iL. Scope This specifies Fuji power MOSFET 2SK1503-01 aan) 2. Outline j H\\ 1) Construction N-channel enhancement mode power MOSFET \\ | } 1) Application for switching G S I) Outview 10-220 (MK5C27595 ) Sj} . Absolute maximum ratings at Tc=25 ‘C (unless otherwise specified) Description Symbol | Characteristics Unit Remarks Drain-source voltage | Vos 500 Vv Drain-gate voltage Vor 500 Vv Res=20KQ Continuous Drain current Ip 10 A Pulsed drain current Tpewtee | 35 A eis: Gate-source vol tage Ves + 30 vo R333 DC ges32 Maximum power dissipation | Po» 80 W | 28s e Operating and storage Ten 150 c me temperature range T sts -65 ~ +150 c 542234. Electrical characteristics at Tc=25°C (unless otherwise specified) p2228] Static ratings $g33? [- Characteristics Bese Description Symbol Conditions Jt Ut eseee Min. Typ. Max. —_ Drain-source Ip =l mA breakdown voltage | BVoss | Ves=0 V 500 v Gate threshold Tp =1 mA voltage | Ves(th) | Vos=Ves 2.5 3.5 5.0 Vv Zero gate voltage Vos= 500V| Ten= 25°C 10 500 aA T cn=125T 0.2 1.0 mA Gate-source Voes=+30V leakage current loss Vos= OV 10 100 nA Drain-source on Ip = 5A state resistance Ros(on) | Ves=10 V 0.7 0.9 Q PAY NAME _[APPROVED Fuji Electric Co,Ltd. JORAWN | Feb, 2 1 “921 ¥ Mansyama| a fensins] |e Magn a) MTSF4259 4 FA Mane a SS SS SS SS SS

7 = Dynamic ratings Characteristics Description Syrbol Conditions Unit Min. Typ. Max. ' Forward lo = 5A | | | | transconductance gifs Vos=25 V 4.0 6.5 Ss ——ee SE fj") * T Taput capacitance l¢ iss | | 1200 i 1800 | pk Qutput capacitance | Coss Ves=0V |_| 160 240 pF ~ f =1MHz Reverse transfer capacitance Crss 10 100 pF t d(on) | _20 | 45 ns Turn-on time Vec=300V Ip = 10A Turn-off time _ r po) we | Reverse diode Fe35_ Characteristics £3835 Description Symbol Conditions Unit gsiig Avalanche L=100 4H, T en=25°C gift capability Tay xsee Figl and 2 A 23355 —— §3 gs g Continuous reverse s5e58 drain current lpr Tc=25C A

2543 Bi — -

538 3: Pulsed reverse 52253 drain current Tc=25T 35 A esdiz Diode forward ly =2X or on-vol tage Vso Ves=0V,Ten=25C Ll 1.65 v Reverse recovery time tre Ir =Ior 500 ns _ ~| ~dI r/dt = 100A/ wS Reverse recovery Ten= 25 charge Qrr 3.5 ut 5. Thermal resistance Characteristics Description Symbol Condi tions an Unit Min. Typ. Thermal resistance — APPROVED Fuji Electric Co,Ltd. DRAWN —— 3 1 » AS ee e MTSF4259 7% FS —_ A a a

Fig.l Test circuit oe L pt>— D.U.T L = Vee vow

02 Vec=1/10 * Vos

L= 100uH 1 pulse aoais Fig.2 Operating waveforms EBSEE Hay rae lay ———— 0 lp |. pul Rect Sout oS [Jf ee : 90 4 FA MALE TT

. ~ Power Dissipation PD=f (TC) 100 & : : 2yE3 4 eae : pose. 0 50 100 150 23550 mig Safe operating area she ID=f (VDS) :D=0.01, Te=25°C g285% woe eee ee Oh i Seana ‘vids z : NEON : b SS “Sams 4 ; ‘ we 107 107 a> vis A NAME _ [APPROVED Fuji Electric Co.Ltd. ——e E co S 4+ Fo A a MISF4259 % FS MAALE TS TS SD AS A SS SS SS SS |

, --— Typical output characteristics ID=f(VDS):80u4s pulse test, Tch=25'°C : M : i im : 5 : : : BV & : : : a : : 3.8 : : ‘av 25a Q 10 20 30 Pa Typical Transfer Characteristics “22258 ID=f(VGS):807s pulse test, VDS=25V, Tch=25"C 55523 s : a : ti) i : () 5 10 VGS )) [J pate [name Fuji Electric Co,Ltd. Ce 4 g 5/ Ty ae a 2 MTSF4259 74 = eS ES | SS ES TS SS SS SS MA4LE

. yi —_

7 Typical Transconductance

gfs-f(ID):80us pulse test, VDS=25V, Tch=25'C pase. i) 5 1a 45 2 22ig3 Typical Drain-source on-state resistance ER SEE RDS (on)=f(1D):804s pulse test, Tch=25°C 55223 ePe32 2.0 ZR e368 4.5" SV! Sav 1" "6 TB. SV I a a8 : | : ; a 5 10 15 20 DA fray | Fuji Electric Co.,Ltd. __| a 2) MI5F4259 9% FE MAALE LS SS SS SS A SS SS SS SS SY | - tJ

: é _ . Drain-source on-state resistance RDS (on) =f (Tch) : ID=5A, VGS=10V 2.5 : : : typ. = : : B : : : 2558 ~50 a 58 100 150 etre Teh (*C) PENG Gate threshold voltage "agiee VGS (th)=£(Tch) : VDS=VGS, ID=1mA 53223 Fesss : Ute ax. = eee ityp. ae i ® 58 100 150 Teh (‘C) Shawn I ] Fuji Electric Co.,Ltd. 2 ke 7, EA 3 P aves | | e MTSF4259 7/7 5 Maal Ee SS SS SS SS AS SS eS A SS SS

. Typical gate charge characteristics VGS=f (Qg) : ID=10A 900 _ 20 P 77 : : i *OYsav4e0v 400EW. et Yi 16 Ss , : : f : S 8 5 : : ; : S rae 4 3yrs i) A\\\\\\ ee room Q e235. a 20 40 60 80 108 geeee Typical capacitances EEEEE C=f (VDS) : VGS=0V, f=1MHz : oT trss 107? i ieee 0 10 26 w 40 vos VM) ; DATE NAME [approveo . . [J pate] name [arenoveo Fuji Electric Co,Ltd. femawn) =| - —4 2 yo oo Misra758 7% FE MAALE er -

‘tg _ - Farward characteristic of revese diode IF=f(VSD):80us pulse test, Tch=25'C a s : : sets 4072 i i zs i) a5 4.8 4.5

23885 Transient thermal

32352 impedance Zthch-c=f(t) parameter:D=t/T 2 p20 ‘ : : Bd : : : : : 5 pt : yo: : : Fa / : : : 4a7> 104 10> 10°? 4074 16° 1a tS) Fuji Electric Co,Ltd. CHECKED | i 2 MT5F4259 ay 4 haliaaiin S } a a : 4 /4 EA MA SS LS LS SS NS SS SS SS SN 41. E

. y FUJI POWER MOS FET TYPE : 2SKI503-01 108 =, 4,540.2 Ss nN] 1340.2, ~ So 5 Nn} o i Trade mark POH -H- N Lot No. ° FEL a See Note:| o ; K1503 BEER Type name i seees | “ on ie 1,220.2 i 3 5 ce — i H + ee 5 = PRE-SOLDER ae OB 0.8297 0.440.2 menses DIMENSIONS ARE IN MILLIMETERS. CONNECTION © te © GATE oe) @ DRAIN @ SOURCE JEDEC : TO-220AB Note I. Guaranteed mark of avalanche ruggedness. DATE NAME APPROVED. Pr . | cate _[arrRoven] Fuji Electric Co.,Ltd. ee HIRAGURTIM,. hus rop20. “ — jee Pre MARUYAMA Miyagileskiso3-o1€ MK5C27595 == MAILE ee eee i ee Ct