2SK1473 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. - Very high-speed switching. + Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Voss 100 «=OV Gate to Source Voltage Voss £15 v Drain Current(DC) Ip 2 A Drain Current(Pulse) Ipp PWS 10gs, duty cycleS1% 8 A Allowable Power Dissipation Pp T.= 25°C 35 W Mounted on ceramic board 15° =W (250mm? 0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg ~55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit D-S Breakdown Voltage Visryoss Ip=1mA,Vgg=0 100 v { Zero Gate Voltage Ipsg Vps=100V,Vgs=0 100) vA (Drain Current Gate to Source Leakage Current Igsg Ves= £12V,Vps=0 +10 pA Cutoff Voltage Vesoom Vps=10V,Ip=imA 1.0 2.0 Vv Forward Transfer Admittance | Ys] = Vpg=10V,Ip=1A 12 2.0 s (Batic Drain to Source Rpson) Ip=1A,Vgs=10V 0.7 095 a on State Resistance Rpson) Ip=1A,Vgs=4V 0.95 1.3 a Input Capacitance Ciss Vps=20V,f=1MHz 150 pF Output Capacitance Coss Vps= 20V,f= 1MHz 35 pF Reverse Transfer Capacitance Crss Vps=20V,f=1MHz 6 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 6 ns Rise Time ty a 10 ns Turn-OFF Delay Time tacom * 60 ns Fall Time te o 20 ns Diode Forward Voltage Vsp Ig=2A,Veg=0 1.0 Vv Switching Time Test Circuit Package Dimensions 2062 sov (unit : mm) us 15, van veo" rs] tov . i 3 [I te tof Ps 530 06 @) 2sKsa73 S: Source G: Gate SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 42893TH (KOTO) A8-7307 No.3774-1/3
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2SK1473 . ASO 16 Pp - Ta 10 —— s-—1 PSS MERCED Enna ee es ba aaa ee h pS rd PrN ANG 2 N Fi rN IN 0... SS x IN < Res S <+—| z12 NI a 3.1 | 1S | ft | LR NUNN) OY NY F Lomeinin ee PS] | TT TN LT B J Operation in KO" ROR) Bos Sen Fs this aren is ie iad %, S Plitiedby Rosen [NYT PRT] Bag “ i SCOPE RE Fott Ti NUT og, oe ee eS 3 || | AL] a Eo. IN 4 tee PAS SCN alse 2 a “2 py ye i) 20 40 60 80 «KO 120 %O (160 . Drain to Source Voltage,Vps — V Ambient Temperature,T, —°C Pp - T. 40 o ¢ “TTT TT | 35) {J IN | TTT LIN TTT das pot tN TT A 2.0} Bf | TT NG TT 21.5) gg 1 | | | AUT pT TNT <¢ | Pp Case Temperature,T, ~°C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MI Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any . and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or fitgation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. ' i Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or #nplied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3774-3/2