2SK1467 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. - Very high-speed switching. - Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss 30 v Gate to Source Voltage Vass 415 v Drain Current(DC) Ip 2 A Drain Current(Pulse) Ipp 8 A Allowable Power Dissipation Pp T,= 25°C 3.5 WwW Mounted on ceramic board 15 W (250mm? X 0.8mm) Channel Temperature Tech 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Veerpss Ip=1mA,Vos=0 30 v [Zere Gate Voltage Ipss Vps=30V,Vgs=0 100 vA Drain Current Gate to Source Leakage Current Iggg Voes= +12V,Vps=0 £10 pA Cutoff Voltage Vesom Vps=10V,Ip=imA 1.0 2.0 v Forward Transfer Admittance |¥| Vps=10V,Ip=1A 12 20 S [Sate Drain to Source Rpson) Ip=14,Vggs=10V 02 03 #2 on State Resistance Rpston) Ip=1A,Vgs=4V 0.3 0.45 a Input Capacitance Ciss Vps= 10V,f=1MHz 170 pF Output Capacitance Coss Vps= 10V,f=1MHz 100 pF Reverse Transfer Capacitance Crss Vps=10V,f=1MHz 30 pF Turn-ON Delay Time tacon) See specified Test Circuit. qT ns Rise Time ty ” 11 ns Turn-OFF Delay Time tacofty + 35 ns Fall Time te a 25 ns Diode Forward Voltage Vsp Ig=2A,Vgs=0 1.0 v Marking : KC Switching Time Test Circuit Package Dimensions 2062 ite 15 G tf | (| ts] Lol . Pe 210 9) 00s] 28k4467 —_o S: Source G: Gate SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41293TH(KOTO)/7190MH,TA (KOTO) X-6948 No.3508-1/3
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