2SK1414 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Low ON resistance, low input capacitance, very high-speed switching. + High reliability (Adoption of HVP process). Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Voss 1500 =~V Gate to Source Voltage Voss £20 v Drain Current(DC) Ip 6 A Drain Current(Pulse) Ipp PWS 10gs, duty cycleS1% 12 A Allowable Power Dissipation Pp 3.5 Ww T= 25°C 200 ~W Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit D-S Breakdown Voltage Viarpss Ip=1mA,Vgg=0 1500 v Zero Gate Voltage Ipss Vps=1200V,Vgs=0 100 yA Drain Current Gate to Source Leakage Current Igss Vos= £20V,Vps=0 +100 nA Cutoff Voltage Vesom Vps=10V,Ip=1mA 1.5 3.5 v Forward Transfer Admittance 1¥p1 Vps=20V,Ip=3A 10 3.0 Ss Static Drain to Source Rpsion) Ip=3A,Vgs=10V 2.5 3.5 Qa on State Resistance Input Capacitance Ciss Vps=20V,f=1MHz 1100 pF Output Capacitance Coss Vps=20V,f=1MHz 350 pF . Reverse Transfer Capacitance — Cygg Vps= 20V,f=1MHz 150 pF Turn-ON Delay Time tacon) See specified Test Circuit. 25 ns Rise Time tr + 85 ns ‘Turn-OFF Delay Time taom % 155 ns Fall Time te a 95 ns Diode Forward Voltage Vsp Is=6A,Vcgg=0 1.0 15 v (Note) Be careful in handling the 25K 1414 because it has no protection diode between gate and source. Switching Time Test Circuit Package Dimensions 2077 Cunitimm) | ae0 20.2, Voo=z0ov ‘ov IL to-3a ivan 4 {8 n - B s_-|'a Pisare “ ohoeevoer ad| @ pf D.C. $0,5% al | _ds Ps | ae fa «J Ex oN Taensase a 28 2 A ol 2.0 ~, " 500 _ 4 S:Source * G: Gate SANYO: TO-3PBL SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41293TH (KOTO) AX-9637 No.4230-1/3
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