2SK1413 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

+ Low ON resistance, low input capacitance, very high-speed switching. - High reliability (Adoption of HVP process). + Micaless package facilitating mounting. Absolute Maximum Ratings at Ta= 25°C. unit Drain to Source Voltage Vpss 1500 v Gate to Source Voltage Voss +20 v Drain Current(DC) Ip 2 A Drain Current(Pulse) Ipp PW 10zs, duty cycleS 1% 4 A Allowable Power Dissipation Pp 3.0 WwW T.= 25°C 60 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Visrypss _Ip=1mA,Vgs=0 1500 Vv {Zero Gate Voltage Ipss Vps=1200V,Vgs=0 100 pA | Drain Current Gate to Source Leakage Current Igss Vos= £20V,Vps=0 +100 nA Cutoff Voltage Vesoom Vps=10V,Ip=imA 15 3.5 Vv Forward Transfer Admittance !¥es! = Vpg=20V,Ip=1A 10 15 Ss { Static Drain to Source Rpgon) Ip=1A,Vgg=10V 80 110 2 (on State Resistance Input Capacitance Ciss Vps= 20V,f=1MHz 550 pF Output Capacitance Coss Vps=20V,f=1MHz 90 pF Reverse Transfer Capacitance Crgg Vps=20V,f=1MHz 30 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 14 ns Rise Time tr ” 16 ns Turn-OFF Delay Time tatom ” 160 ns Fall Time te 4 40 ns Diode Forward Voltage Vsp Ilg=2A,Vos=0 10° «15 v (Note) Be careful in handling the 25K1413 because it has no protection diode between gate and source. Switching ‘Time Test Circuit Package Dimensions 2076 Yoo =200v (unit: mm) eo~ 72° 704 Vin o “ of 0 25 vin me=200a Theol} Fp» [H] 0.c. $0,5x 3 2H ee 2 Gl pe 18 * L Poa 6 4.0. PS S| esKias3 —— 21.0: S: Source D: Drain @ Soe G: Gate a ‘pce SANYO: ‘T0-3PML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41293TH (KOTO) AX-9637 No.4229-1/3

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