2SK1412LS SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance, low input capacitance.
  • Ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Micaless package facilitating mounting. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK1412LS Package Dimensions unit : mm 2078C [2SK1412LS] N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.20.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2

No.4228-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.5 3.5 V Forward Transfer Admittance yfs VDS =20V, ID =50mA 50 100 mS Static Drain-to-Source On-State Resistance RDS (on) I D =50mA, VGS =10V 140 200 Ω Input Capacitance Ciss V DS =20V, f=1MHz 40 pF Output Capacitance Coss V DS =20V, f=1MHz 12 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 3.0 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 15 ns Rise Time t r See specified Test Circuit. 25 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 50 ns Fall Time t f See specified Test Circuit. 350 ns Diode Forward Voltage V SD IS=0.1A, VGS =0 1.0 1.5 V Switching Time Test Circuit 0 1 02 03 04 05 0 160 120 200 Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- mA ITR01044 02 4 6 141281 0 120 140 100 200 160 180 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- mA ITR01046 ITR01047 V DS =20V 25°C 75°C Tc= --25°C --40 --20 0 2 04 06 08 0 1 0 0 120 140 Case Temperature, Tc -- °C ID -- Tc Drain Current, ID -- mA 4.0V 4.5V 5.0V 3.5V 3.0V V GS =5.5V 04 81 2 1 6 2 0 100 Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- mA ITR01045 4.0V 4.5V 3.5V 3.0V V GS =5.0V V GS =10V 120 140 100 200 160 180 VDS =20V 10V PW=10 µs D.C.≤1% P. G R GS 50Ω ID =50mA R L=400Ω VDD =200V VOUT 2SK1412LS VIN D G S 10V VIN

No.4228-3/4 V GS =10V V DD =200V P.W.=2µs D.C.≤0.5% td(off) tf tr td(on) 10 32 57 100 23 5 7 1000 23 1.0 100 Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- mA ITR01053 Tc=25°C Single pulse 100 µs1ms 10ms100msDC operation Operation in this area is limited by RDS (on). 048 2 0 1612 24 28 32 Drain-to-Source V oltage, VDS -- V ITR01052 Ciss, Coss, Crss -- VDS 1.0 100 Ciss, Coss, Crss -- pF 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C ITR01054 PD -- Ta 1.2 0.8 0.4 1.6 2.0 2.4 Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C ITR01055 PD -- Tc Allowable Power Dissipation, PD -- W ITR01049 1681 0621 2 1 404 200 160 120 240 280 320 Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS ID =50mA Tc=25°C Ciss Coss Crss No heat sink f=1MHz 57 10 25 37 100 25 3 Drain Current, ID -- mA ITR01051 SW Time -- ID 1000 100 Switching Time, SW Time -- ns --40 --20 80 100 1200 4020 60 140 200 160 120 280 320 240 Case Temperature, Tc -- °C R DS (on) -- Tc ITR01050 --25°C 25°C Tc=75 1072 3 35 100725 100 Drain Current, ID -- mA yfs -- ID Forward Transfer Admittance, yfs -- mS ITR01048 V DS =20V V GS =10V ID =50mA IDP =200mA 10µs ID =100mA Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω

No.4228-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS