2SK1399-3 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

Can be driven by a 3.0-V power source Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor N-Channel MOSFET 2SK1399 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 Gate-Source Voltage VGS ±7 Continuous Drain Current ID 100 Pulsed Drain Current (Note.1) IDM 200 Power Dissipation Ta = 25℃ PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 50 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±7V ±5 uA Gate Cut-off Voltage VGS(off) VDS=3 V ID=1uA 0.9 1.5 V VGS=2.5V, ID=10m A 40 VGS=4V, ID=10m A 20 Forward Transconductance gFS VDS=3V, ID=10m A 20 38 ms Input Capacitance Ciss 8 Output Capacitance Coss 7 Reverse Transfer Capacitance Crss 3 Turn-On DelayTime td(on) 15 Turn-On Rise Time tr 100 Turn-Off DelayTime td(off) 30 Turn-Off Fall Time tf 35 Static Drain-Source On-Resistance RDS(On) Ω VGS=3V, VDS=3V, ID=20mA, RL=150Ω,RG=10Ω VGS=0V, VDS=3V, f=1MHz ns pF ■ Marking Marking G12 Source Internal Diode Gate Protection Diode Gate Drain

  • Complments the 2SJ185 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1399 ■ Typical Characterisitics 0 20 40 60 80 100 120 140 160 100 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tc - Case Temperature - ˚C dT - Derating Factor - % TA - Ambient Temperature - ˚C PT - Total Power Dissipation - mW 12030 60 90 150 210180 240 100 150 200 250 300 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - mA 25.0 1 1.5 100 2.5 V VGS = 4.5 V 4.0 V Pulse measurement TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - mA 7 85 63 40 1 2 100 0.1 0.01 VDS = 3.0 V Pulse measurement TA = 150˚C 75˚C 25˚C –25˚C 150 2.0 1.5 1.0 0.5 50 1000 Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 3.0 V ID = 1 µA GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 20 50 100 200 500 1000 ID - Drain Current - mA | yfs | - Forward Transfer Admittance - mS 100 200 500 1000 1 5 VDS = 5.0 V f = 1 kHz

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1399 ■ Typical Characterisitics Pulse measurement DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - Ω 5 100 1 2 3 4 6 7 8 9 ID = 100 mA 10 mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 2 5 10 20 60 ID - Drain Current - mA RDS(on) - Drain to Source On-State Resistance - Ω 100 0.60 4.0 V VGS = 2.5 V Pulse measurement