2SK1390-R FUJI
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- PDF pages: 10
Technical content
DEVICE NAME : Power MOSFET TYPE_NAME : 2SK1390-R SPEC, No. : _ Fuji Electric Co,Ltd This Specification is subject to change without notice. [pate Fuji Electric Co.Ltd. cueckeo’ ¢ ! KH [| | A é 7] . Y 0257-R-004a
- Scope This specifies Fuji power MOSFET 2SK1390-R 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-3PF —-Dutview See to 4/10 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) Pairs ote [ve | [vl sina pr dtatin [Pe | wf 6. Electrical characteristics at Tc=25°C (unless otherwise specified) Static ratings : Description Symbol! Conditions Unit Pie [om [me | Drain-source Lo =ImA breakdown voltage | BVoss | Ves=0V Vv - | Gate threshold 1o =1mA ~~ voltage | Ves(th) | Vos=Ves 1.5 2.5 Vv drain current Ves= OV Gate-source Ves=+20V leakage current Vos= OV nA Drain-source on- [ve= wv] | 0.022] 0.040 State resistance | Ros(on)| Io = 25A Q Vos= tov} | 0.015) 0,025 S a Fuji Electric Co,Ltd. gf. Xo = Y 0257-R-003a
Description Symbol Conditions Unit Pie [om [oe | : Forward lo = 25a transconductance gfs Vos= 25V 20 36 s Vos=25V f ==1MHz - Reverse transfer capacitance Crss 400 pF : Pap epe | Turn-on time Vec= 30V lo = 50A Turn-off time Pie an |e | Reverse diode Description Symbol Conditions Unit Diode forward Ip =2X lor on-vol tage Vso Ves=0V, Ten=25°C 1.35} 2.00] V Reverse recovery te =Tor . time tee Ves=0V 100 : -dle/dt=100A/ps Reverse recovery Ten=25°C charge 0.5 ue T. Thermal resistance Description Symbol] Conditions Unit : Pie [me [me Ca IZ] Thermal resistance frinora] | Tino or] 5 [1] Full Flectric Co.Ltd fo %o FE . Y 0257-R-003a
FUJ! POWER MOSFET ~ ; . TYPE : 2SK1390-R 15.520.3 a 5.540. con H S20, a 3.2 | | | 9 1 | o} no Trade mark {<j S 1 Type name | S war 2 | SK1390 3 u Lot No. sper co - —Hh CA j He i . 4 Y Hil 6203 . HF le BF 2120.3 € 4 a i 8 : i 4 Pre~Solder ; Hl 118 0.6 8 on abn oD [=] [ee] [P| 0) ® © CONNECTION @ GATE @® DRAIN ® source DIMENSIONS ARE IN MILLIMETERS. Ful Electric Coxttd ¥ 0257-R-003a
PD=f (Tc) 0 50 100 150 Te [°C} : Safe operating area ID=f (VDS) :D=0. 01, Tc=25°C pn et th HO. 21 Sef to"! 10° 10! 10? vDS [V] Fuji Electric Co.,Ltd. Z a Ko == Y 0257-R-003a
Typical output characteristics ID=f (VDS) :80us pulse test, Tc=25°C 10 i / aeegdesaeeedGnsGsGinaeauad 0 1 2 3 “4 5 6 oO VOS [V] Typical transfer characteristic ID=f (VGS) :80 us pulse test, VDS=25V, Tch=25°C « aUDERMAAARELunee aacnaedecea 9 0 1 2 3 4 5 6 V@s [V] : CT Y 0257-R-003a
Typical forward transconductance efs=f(ID):80us pulse test, VDS=25V, Tch=25°C 40 (TPP reer reer rrr PPePrrrer yr 30 (EV pit LiL EEE EE TET i 0% 10 20 30 40 50 60 70 80 90 100 1D [A} . Typical drain-source on-state resistance RDS (on)=f (1D) :80us pulse test, To=25°C 0 10 20 30 40 50 60 70 80 90 100 ID [A] Y 0257-R-003a
Drain-source on-state resistance
0.05 RDS (on) =f (Teh) : 1D=25A, VGS=10V
-50 0 50 100 150 Tch [°C] : ; Gate threshold voltage VG@S (th) =f (Tch) : |D=1mA, VDS=VGS 0.0 -50 0 50 100 150 Teh [°C] Lf | Y 0257-R-003a
Typical gate charge characteristic VG@S=# (Qg) : 1ID=50A, Tc=25°C 0 0 0 20 40 60 80 100 #120 140 Qg [nc] ; Typical capacitances C= (VDS) : VGS=0V, f=1MHz 10! 10° Jind [Po HTH renee . 0 5 10 15 20 25 30 35 40 VDS [V] To a a Y 0257-R-003a
Forward characteristic of reverse of diode IF=f (VSD) :804s pules test, VGS=0V ee a ee ONT oh=25°C typ, 10° on Baaal on | = . VSD [V] Transient thermal impedande Zthch=f (t) parameter:D=t/T . OO ee eee 10° 0. Site a ee ea feat 1078 1074 1073 107 107! 10° 10! t [s] Fuji Electric Co.,Ltd oe : ref uji Electric Co.,Ltd. . oo ho EA] Y 0257-R-003a