2SK1277 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
F-V Series 250V 0,12Ω 30A 150W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 250 V Continous Drain Current I D 30 A Pulsed Drain Current I D(puls) 120 A Continous Reverse Drain Current I DR 30 A Gate-Source-Voltage V GS ±20 V Max. Power Dissipation P D 150 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V GS =0V 250 V Gate Threshhold Voltage V GS(th) ID =10m A V DS= V GS 2,1 3,0 4,0 V Zero Gate Voltage Drain Current I DSS V DS =250V T ch =25°C 10 500 µA V GS =0V Gate Source Leakage Current I GSS V GS =±20V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =15A V GS =10V 0,09 0,12 Ω Forward Transconductance g fs ID =15A V DS =25V 10 20 S Input Capacitance C iss V DS =25V 2400 3600 pF Output Capacitance C oss V GS =0V 500 750 pF Reverse Transfer Capacitance C rss f=1MHz 280 420 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =150V 35 50 ns t r ID =30A 140 210 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 420 630 ns t f R GS =25 Ω 180 270 ns Diode Forward On-Voltage V SD IF =I DR V GS =0V T ch =25°C 0,9 1,8 V Reverse Recovery Time t rr IF =I DR V GS =0V 100 150 ns -dI F /d t=100A/µs T ch =25°C - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 35 °C/W R th(ch-c) channel to case 0,83 °C/W
250V 0,12Ω 30A 150W F-V Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ↑ 1 ↑ 2 ↑ 3 ID [A] R DS(ON) [ Ω ] ID [A] V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch ↑ 4 4 ↑ 5 ↑ 6 R DS(ON) [ Ω ] g fs [S] V GS(th) [V] ID [A] → ID [A] → T ch [°C] → Typical Capacitance vs. V DS Typical Input Charge Forward Characteristics of Reverse Diode ↑ 7 ↑ 8 ↑ ↑ 9 C [nF] V DS [V] V GS [V] IF [A] V DS [V] → Q g [nC] → V SD [V] → Allowable Power Dissipation vs. T C Safe operation area ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 11 P D [W] ID [A] T c [°C] → V DS [V] → t [s] → This specification is subject to change without notice!