2SK1257 PANASONIC

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Technical content

Silicon N-channel Power F-MOS FET @ Features @ Package Dimensions © Low ON resistance Ros (on) : Rys (on) 1=0.0241 (typ.) | Unit: mn © High switching rate : t=320ns (typ.) | - ae rh © No secondary breakdown <—) Sem cs ee © Low voltage drive is possible (Ves = 4V). | 7 Pode | Br €-} 5 @ Application Fits] NJ © DC-DC converter | athe © No contact relay | bat © Solenaid drive | J AT AEF sma? 0 © Motor drive 4 All aed igs = 2 i yfoesot YUU | 236-03 @ Absolute Maximum Ratings (Tc=25°C) | Ripeeet Item Symbol | Value | Unie } Looe | Drain-source voltage Voss 60 ieee d —* stones | Gate-source voltage Voss +20 v | 2: Drain | MW teoeg 1 l= | | 3: Source tical Fad ARS Se a |__ tom at a rae) Lincs Ibe Ci) a [Te=25t | sScaet Fores locnsnalied (3 ital al =~ og Bibel Channel temperature Ta 150 = Storage temperature Tag —35~+150 | tc @ Electrical Characteristics (Tc=25°C) Item Symbol Condition | min | typ | max. | Uni Drain current Toss |. Vos=40V, Veg=0 | } 0 | pA Gate-source current loss | Ves=+20V, Vps=0 21 uA OE si Ry | Drain-source voltage Voss Ip= 1mA, Voc=0 6 v ti Gate threshold voltage | Viv | Ves=10V.tyStma Tt 2s Tv = Drain-source ON resistance Rysfonile a = Drain-source ON resistance | Rysioni? | Vce=4V, Ip=10A 0033 | 005 | a aT Forward transfer admittance [¥fs |_| Vps=10V.1,=20A 13 as a a3 Input capactance [TC oF Output capacitance Coss Vos=10V, Vos=0, f=1MHz 1400 pF Reverse transfer capacitance Le Gus: oo pF Bn son Vig=10V. 1p =20A = = Fall time te Vig'30V. R= 150 | 320 | ns Delay time td loff) me Ste: | | 690 ns ee =) = Panasonic