2SK1228 PANASONIC

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Technical content

Silicon MOS FETs (Small Signal) unit: mm 1: Gate JEDEC: TO-236 2: Source EIAJ: SC-59 3: Drain Mini Type Package (3-pin) 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9±0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4±0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Marking Symbol: 4V 2SK1228 Silicon N-Channel MOS FET For switching n Features l High-speed switching l Wide frequency band l Incorporating a built-in gate protection-diode l Allowing 2.5V drive n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol V DS V GSO ID IDP PD Tch Tstg Ratings 100 150 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS V DSS V th R DS(on)*1 | Yfs | C iss C oss C rss ton*2 toff*2 Conditions V DS = 20V, VGS = 0 V GS = 10V, VDS = 0 ID = 10mA, VGS = 0 ID = 100mA, VDS = 5V ID = 10mA, VGS = 2.5V ID = 10mA, VDS = 5V, f = 1kHz V DS = 5V, VGS = 0, f = 1MHz V DD = 5V, VGS = 0 to 2.5V, RL = 470W V DD = 5V, VGS = 2.5 to 0V, RL = 470W min 0.5 typ 100 0.8 4.5 4.1 1.2 0.2 0.2 Unit mA mA V V W mS pF pF pF ms ms max 1.1 *1 Pulse measurement *2 ton, toff measurement circuit Vout VDD = 5VVGS = 2.5V 50W 470W100mF Vin 90% 10% 10% 90% Vout ton toff

Silicon MOS FETs (Small Signal) PD ¾ Ta I D ¾ VDS | Yfs | ¾ VGS C iss, Coss, Crss ¾ VDS ID ¾ VGS R DS(on) ¾ VGS V IN ¾ IO 2SK1228 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 VGS =1.8V 1.6V 1.4V 1.0V 1.2V Ta=25˚C Drain to source voltage VDS (V) Drain current ID (mA ) 06 5413 2 VDS =5V f=1kHz Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 1 10 100 10003 30 300 C iss C oss C rss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 06 5413 2 120 100 Ta=–25˚C 25˚C 75˚C VDS =5V Gate to source voltage VGS (V) Drain current ID (mA ) 06 5413 2 120 100 ID =10mA Ta=75˚C 25˚C –25˚C Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (W ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 VO =5V

Ta=25˚C Output current IO (mA ) Input voltage VIN (V)