2SK1217-01R FUJI
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2’ 7 2SK1 21 -O1R FUJI! POWER MOS-FET N-SHANNEL SILICON POWER MOS-FET F Il SERIES MFeatures Outline Drawings @ High speed switching | @ Low on-resistance eet 5505 Bs og: 3e @No secondary breakdown a @ Low driving power |< a 14 @ High voltage Ly} 4 @M/o5c= +30V Guarantee Lda ‘ © \\valanche-proof Vay =a Applications | ay Switching regulators | [ we gate euPS besa aif [2s © 1C-DC converters _ - : @ General purpose power amplifier JeDEC | — EIAJ ee | MMax. Ratings and Characteristics MEquivalent Circuit Schematic @Absolute Maximum Ratings(Te=25°C) _ Items Symbols Units ne __Drain-source voltage Voss | 900 vo | —~Sontinuous drain current In [oe aA ; | ~ Pulsed drain current Toows|_._ 23 | A ~ Preinio) ___ continuous reverse drain current | Ibe 8 | A __Gate-source peak voltage | Voss | $30 | VO “Max. power dissipation | Py | 100) SW. Gate(G) Dperating and storage (Ta | 150 | °C __semperature range Taw =55~+150) °C Source(s) ! @l:lectrical Characteristics(To=25°C) a _ Items Symbols [Test Conditions Min. [ Typ. | Max. | Units ___ Drain-source breakdown voltage | Veswnss | In=lmA _Vos=0V a a __. Gate threshold voltage _Vesum Ip=ImA Vos=Vos |S 35 | 5.0 | V_ ; Vos=900V Ta, =25C —1o | 500 [ua ___ Zero gate voltage drain ewrent | loss — [verte facie “eae oma _ Gatessource leakage current_| Toss | Vos=+30V_Vos=0V yo | 100 | nA ___ Drain-source on-state resistance | Rosom | _In=4A_Ves=10V_ [15 | 20 | “a __ Forward transconductance | gum |“ In=4A_Vns=25V 30 | 60) | S __ Input capacitance [Cus | Vos=25V 1400 | 2100 __ Output capacitance _ | Coss | Vos =0V 200 | 300 pF — Reverse transfer capacitance | Crs | £ =IMHz ee ee Turn-on time ton too | ye poov Ips || 50 | ton + tagom tty) bo yer In=Ba ___|_ 230 | 350 hs Turn-off time ton taosn Re= 250 300 | 450 —aattaomtty ft | 160} 240 | _ Diode forward on-voltage | Vso | Ir=2*Ipa Vos=0V_ Ta =asc | | 10] 15 | OV “ Reverse recovery time ter Tr=Jon d/h =100A/us_Ten=25°C 1000 ns @ hermal Characteristics _ Items Symbols | __Test Conditions | Min. | Typ. | Max. | Units Thermal Resistance Runen-a | channel toair [| 30.0 | “c/w _ Thermal Resistance Rincen-e | channel to case [—+ + 125 | °C/W. A2-160
2SK 1217-01R FUJI POWER MOS-FET MCharacteristics 5 (4 mm’ s| f ‘Toh=25°C » EY Sig besy TP Eee eo | Pry COCCee errr CC TTT rl 6.0V sO ET oe. PEE A 10 iy 4 Co a ey | ny ASR Cocca on) Ae co EERE ae if Corer ATT yt Hee Roem EET EAR ieee coerce “ A i a 2 eter ec cceee eee PeSSCoeeeene Sees caseensaeevaerase an tT LA COC Pe EUCEECERUOEESEETOETEE Ve ao a ° 20 40 60 50 ° so ~«00 SCS Vos(V) TeslC) Typical Output Characteristics On State Resistance vs. Ten 8G TP Tpanvenage F Hy Rosa=100):00ys PULSE TEST. Ten=25'c | | = “ - ey muase.tes? » fresy Sorts tea TTT ce HHH a> Greer eae op—pamef of | oH TPP yy | [TI HEF --H ECCEHEEEEE EE PRICE HHH PH SEE EHH ‘e Ree FCCC tsy COPP eer ree Ayre W ST CCCOPCELL ELE @ CEPT yy ye. COC tv [Pree rr rrr rr rey) Th tof | Ty yy COCO CT ETy TT Pr) [Ltr CrP rrr rt rrr rr o 5 Lo) 6 oO 5 10 6 Vos(V) 1ofA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo sEsviteneesc | SERRE +4 4 “EERE SE i oe 2 tf Corre es 4 A Ree ee et BERR ea a saeaee ceseeeeee Tc a ry BEA Se see Ee | BROCCO a ss im Ves, 2 os FPP PPP | ae a | oe rn TI {i} ™w) Cerrar i) Ree |— a ia HG ry fH es 2 eee eee ee Ao = Loree eee HAE Try a BO eG | a im) A ° 5 10 5 C) 50 100 150 Io(A) ToC) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten A2-161
FUJI POWER MOS-FET 2SK 1217-01R Wea ol 800 20 FEE cartamteoumam SS MateCrcocscSaranaae SACS] A cece KH oo+7 Hee NE soo vs CCCP SECC oss CRC EC Cece eye oof PACA c ° RES WT a ves | 400 ho on) PRS SERRE COCA roy TT] oP CASES Ce ASS ison HSS He | ve RAE Cor LSA ETT ees] on) coo DESERT, CA 20 PTT vex CC ot et ee | Pet 7294 Cee) ssa 2==--—-—==== LAG —"eov EET >CEEEEEEEEEEEREESEH LOSS A SEEET TTT ‘0 20 30 ° <0 00 Vos(VI Og{nc) Typical Input Charge oF a patiumregys PuLse Test =| —f-— a 44 ae Cero co AnNsH Ton <00/ 001 nen SUaE ET TERE Ss a ee eae | IN RSs So aaeaseooneee oS CERRY Hee NEE 4 ian an pe col ETN H [TI eo LL ee CoA . = SSS SSS ww) Co NH Essee=s See=Saaee { w ysecnas/.cecceeeeee COOP AGRA AAAS EEE N ce. x 50 100 160 ° °° * atv) “ ° T.CC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc iam aaiii SMA HUNAN Sao eee eee) eos eS eee hy Sie saniliis 02, eee eR oti, Temes LN Ths em | a inl Pann Ww St ston eee cow eseepaeer UTT E FSSS Bae tie Eolet ee HEE oe be, Cin To a | [Lee 0s 10-4 10> 10? 107 1° 10' 0 0 0 1S) Vos(V) Transient Thermal! |mpedance Safe Operating Area A2-162
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