2SK1214 PANASONIC

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Silicon N-channel Power F-MOS FET @ Features _ ™ Package Dimensions * Low ON resistance Ros (on) : Ros (on) 1=0.062 (typ.) Unit: mm © High switching rate : t=110ns (typ.) S \\ soamoe damn © No secondary breakdown g [gzess | ~ mas © Low voltage drive is possible (Vgs = 4V). erode @ Application ; as. OY - # DC-DC converter 5 ia © No contact relay THR ssa © Solenoid drive 5 FFE San! re, © Motor drive 5 ii O7max. a e041 @ Absolute Maximum Ratings (Tc=25°C) PEP sos Item ‘Symbol Unit Looe] Drain-source voltage Vow 80 Vv res 1 Gate Gate-source voltage Voss v_ 2: Drain AW diag Ip 2 3 Source Drain current De ly 20 A 70-220 full pack package (a tyPe) td Ta=250 2.0 Channel temperature 150 c @ Electrical Characteristics (Tc=25°C) Drain current oss Vig=65V.Ves=0 | re ee ee Gate-source current Tess | Vog= £20V, Vps=0 : | uA Drain-source voltage Voss | Ip=1mA,Ves=0 YO v Gate threshold voltage “Veh Vn=10V, [y=1mA 1 Vv Drain-source ON resistance | Ros(on)l_| Vgs=10V. [p=6A | 0.06 | 0.09 | a _ Drain-source ON resistance | Rys(on)2 | Vog=4V, Ip=6A [| 0.09 | 01% | a Forward transfer admittance LYis| | Vps=10V, Ip=6A | 6 | ow. | S$ inputeapaciance uP a ‘Output capacitance Coss | Vos=10V,Vos=0,f=1MHz [| 550 | +| pF Reverse transfer capacitance Crss | | 190 || so Faltme Vos=10V, In=6A Delay time ta off) es ee ‘ —1141— Panasonic

Ib—Vos | Ys | —Ib Ros (on)—Ip “THOT : ee] ie atte a ALT Bee], TTT TT Ee") alt | 3. ged LY SHETTLHtLLLL eH HEHHTH ot YT PACT) UC) Eee PR) a i i Pg | fe an | i Al z, (a tt Ja ha : HT) Weston bao eter PS deter] Ba tL OTTER UT TT 0 ‘. 8 Ww se 2 % 8 16 Evy 32 4 4B % By 16 Ey Ey 4 rain-source voltage Vos (V) ‘Drain current Ip (A) Drain current Ip (A) Ip—Ves Cissy Coss» Cres Vos tony tr, ta (off) —Ip ALG hee] | Sa ) TTT TT eee CT) Meee iT wT 1 wee ae ent LTT ie SSE Ll PUTT is “ASS - Pte weet) ju CTT 8 & === r pr HHH ptr bpp UH i i A SRURREE es WoO = ee MOV O0RURNRRROe Oe ===2=2-2-=-- ee TWH issccssseseee 10 t UT) oe FERRE iene 11) Gate-source voltage Ves (V) Dram-source voltage Vos (V) Drain current Ip (A) * Pp-Ta Safety operation area (ASO) Rps (on)—In ECP es oH HHHtar om acu ee ee a F HAHA 2 SER gee on PARE Lae oo PHA of ez, LE Poon 6 "ATH 7 Ko (EIEN peat Cort Th 5 SaeEReNG 03 FA Ht Poo poe NN oy UT) 0 A Ambient temperature Ta (°C) Dram-source voltage Vos (V) ‘Dram current Ip (A) Panasonic 6932452 0017140 722 = ————_ inasonic —1142—