2SK1212-01R FUJI

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f 2SK1212-01R FUJI POWER MOS-FET ee N-CHANNEL SILICON POWER MOS-FET F I Ss E R | ES M@ Features Outline Drawings @ High current es @ Low on-resistance oo Se @No secondary breakdown i an @ Low driving power ey -| @ Avalanche-proof & @ Applications Leal @DC-DC converters ie ® Motor controllers | 4 Wy _ji.seae & 1 Gate @ General purpose power amplifier | i Rn JeDEC | _—— MMax. Ratings and Characteristics Equivalent Circuit Schematic @Absolute Maximum Ratings(Tc=25°C) Items Ratings [| Units. Diain-source voltage Voss 900 Vv Continuous drain current Ib 5 A . —cntinuous drain - Drain __ Pulsed drain current Tpguiy | 20 A ono) Ccntinuous reverse drain current | Ion 5 A Gi te-source peak voltage Voss £20 v ‘Mix. power dissipation 80 W Gate(s) Ojerating and storage Ten 150 *c teinperature range Tow =35~ +150) °C Source(s) @Ele>trical Characteristics(Te= 25°C) Items Symbols Test Conditions [ Min. | Typ. | Max. | Units Drain-source breakdown voltage | Veanss__| In=ImA_Vos=0V. 900 [ly v Gite threshold voltage Vesan In=1mA_Vos=Veos 24 30 [40 | Vv

7 Vos=900V Ta=25C | | 10 =| 500 | pA

Ze'o gate voltage drain current | Ipss Vor=0V Teenie 10 | mA Gi te-source leakage current Ves=+20V__Vos=0V | _10 | 100 nA Drain-source on-state resistance | Rostom Ip=2.5A_ Ves=10V. i Fcrward transconductance | gr. _[1b=2.5A_Vos=25V 30 | 60; TS Input capacitance Cass Vos =25V [|__| 1500] 2400 Ot tput capacitance Coss Vos=0V [| 150 | 240 pF Reverse transfer capacitance | Cras {_=IMHz _ Re 80 Tirn-on time ton avon , _ 50 en Hun Ht) t Vecy A [| io] Tim-off time torr tien yee soa torn +t) ° Didde forward on-voltage Tr=2XIpr Vos=0V_ Ten=25°C Vv Reverse recovery time Is=Ior_di/d=100A/s Tn=25C] | 900_| ns @Thermal Characteristics ~—_ Items Test Conditions Min. | Typ. | Max. | Units Thermal Resist channel to air Tee | “C/W ausssrance Rinne | channel to case CI “c/w. A2-157

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