2SK1212-01 FUJI
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2S K1 21 2-01 SIPMOS® FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F I Ss E R I ES @ Features HOutline Drawings @High current . 55 @ Low on-resistance Bs gapite @No secondary breakdown aa, | @ Low driving power | 3 | Applications bed @DC-DC converters ‘Tih @ Motor controllers i et 4 + cate General purpose power amplifier | | 3-Dron | JEDEC EIAJ —_ @Max. Ratings and Characteristics MEquivalent Cireuit Schematic @Absolute Maximum Ratings(Tc= 25°C) Items Units Drain-source voltage [Voss | 9900S] _ | Continuous drain current. Ib 5 A | oe _ Or Pulsed drain current Toon | 20 A | anv) ___ Continuous reverse drain current) lpr 5 A ___ Gate-source peak voltage Vv Max. power dissipation [P| 80S | «SW Gate(e) Operating and storage | Ten | 50 | *C Source(s) temperature range ‘C @Electrical Characteristics(Tc=25°C) Items. [ Symbols [Test Conditions | Min. [ Typ. | Max. | Units Drain-source breakdown voltage | Visayss | In=ImA_Ves=0V. laa Vv __ Gate threshold voltage Vesum Io=ImA Vos=Ves 30 | 40| Vv : Vos=900V Tan=25'C | ‘| 10 | 500 | yA Zero ga lage eh cae Ta=wsC_[ [0g | 10 | ma Gate-source leakage current Ves=+20V_Vos=0V fF _ | 10 | 100 | nA Drain-source on-state resistance 1p=25A_Vos=10V [| 20 [25] 9 Forward transconductance | gs | In=2.5A Vos=25V | 30[ 60| | S$ Input capacitance Vos =25V |__| 1500__| 2400 | Output capacitance Ves=0V [| 150 [240] pF Reverse transfer capacitance f =1MHz || 50 | 80 | Tuaravon time to Van30V [aba ||| 0 (ton + tavony tte) Vac=10V 80 | 120 as Turn-off time tor tavtn Reson 300 (tacorn tte) rt & __ _ 120 | 180 Diode forward on-voltage 1r=2XIor Ves=0V Ta=25C | | 10 15| V Reverse recovery time tre Ir=Ior_ d/hk=100A/ps Ton=25C |_| 900 ns @Thermal Characteristics Items [Symbols [Test Conditions | Min. | Typ. | Max. | Units Thermal Resist: [Rowen | channeltoair | T8000 | “CW ee | Ruvenne [ channel tocase TL 888 | CW ag-157 MM 2238752 0003013 477
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