2SK121 SONY
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"SONY CORP/COMPONENT PRODS 18E D MM@ 8342383 OOO210b 4 ml Silicon N-Channel Junction FET TAP as Description Package Outline Unit mm The 2SK121 is a junction type FET which has the g0?02 feature of obtaining high voltage high gm and low TELS 4.0201 noise which covers from the Audio band to the VHF a |_| E Application 045 ¢0.1 11, e For low frequency, low noise amplifier and high- — HI ) ——t frequency amplifier. @.80*™ | i sis} a elal ¢ Structure oa N-channel Silicon junction FET . - d 123 ry, 1. Drain 2. Gate 1gt0t 13*04 3. Source Absolute Maximum Ratings (Ta=25°C) « Drain-to-Gate Voltage Voco 30 v * Source-to-Gate Voltage Vsco 30 Vv « Drain current Ib 20 mA « Gate current Io 5 mA « Allowable power dissipation Po 300 mw « Junction temperature Tj 100 °c + Storage temperature Tstg —50to+120 °C -114- . .
SONY CORP/COMPONENT PRODS 18E D M@™@ 4382383 0002107 & mm a 2sk121 SONY. seyey EE (1-29-25 Electrical Characteristics (Ta=25°C) [tem TSymbor | Condition [min | Ty | Max | unit | Gate to Source Voltage Ic=10pA, Vos=O0V [-30 | [| fv | [ate Cut Curent | teas |ves=—isv, vew=ov |__| | =10 | wa | Foren Curent | tose _|Vowriov. Vea=ov | 08 | | 143 | ma | Gate to Source Cutoff Voltage Vos=10V, In=30HA [-o1s{ | -1.49] v_| Resistance Mark (Standard subdivision) [Rank | toss (Vos=10V, Ves=0V) —— | 3 | 4.5 to 7.7 mA GG GQ to [4 | 63 to 9.9ma Lorno 195g Rank [ 5 | 8.1 to 12.1 mA Circuit Design Reference Material (Ta=25°C) ; Input Admittance [ mm | f=100MHz [12 | xa | Output Admittance | top | f=100MHz [ [ko | Short Circuit Equivalent Input Ves=OV, f=1kHz i Noise Voltage | = | Vos=10V, Rg=10kN nviy'He ae -115-
SONY CORP/COMPONENT PRODS 16€ D M@@ 6342343 0002108 & mm a 28K121 SONY. _« 7-29-25 Drain Current vs. Drain Current vs. Drain-Source Voltage Gate-Source Voltage 10 10 [ [eee] TT TT | I [TTT TT Tt yt [tt fy TT vos Pt tt ty ty tty 7G Eg HE : iA, ttt tee pele Te tee ee pie EET TT i. (Ree ee eee Wet TT tet ee Vert ttt i tt tl pt ttt tT ZT Tt LTT Tt tt tt | oLt {tT yf {| | Vps — Orain-source voltage (V) Vag — Gate-source voltage (V) Noise Figure vs. Input Generator Resistance “CTT TTT ee TT LINE TTT eee TT a CLOUMI ACU TT ease fl a a OO Uh a (CUM TP NUMIE T T § CUI PNT S COCCI TT # COPING CE ST ° LOLI TTT Tin =r rr r 1 10K 100K Rg — Input generator resistance (2) — 116 -
SONY CORP/COMPONENT PRODS 18E D M@@ 6382383 0002109 T a 28K121 SONY. ‘ T-29-25 Noise Figure vs. Frequency CTT TT TTT COUT TT TTT vos sew THT a CCU TP TT ec asec ull | NT nt HH CONT § LOOSE TO TT ig a |
2 COUT TRA TT TT
«LL 10 100 1K 10K 100K J — Frequency (Hz) Noise Figure vs. Drain Current | i PTT ss nee Tf a LUI LUMI TTT te 28'¢ TIT @ ELUNE ETT H oO NTT 2 {LUM TN TT
2 EEO COIN TTT
- EH PHS oC OTITIT reT w 10p 100p 1m Ip — Drain current (A) -1W7T- 1 .
SONY CORP/COMPONENT PRODS 146E D M@@ 4342363 0002110 &b mm 2sk121 SONY. J-29-25 Forward Transfer Admittance Drain Current vs. Temperature vs. Ambient Temperature 4 {== == — — BEES GREER Ere PP Py Py yt tt a es jE) | GC eeEe | FSSSESes | Geese SL ee | gg CT === OE === == ee ae oe ee ee ae oe a a a = el = CT a wtti TTT itt) CPT Tit tt it -20 0 20 40 60 680 100 120 -20 0 20 40 60 60 100 120 Ta — Ambient temperature (°C) Ta — Ambient temperature (°C) Short Circuit Input Capacitance Reverse Transfer Capacitance co vs. Gate-Source Voltage vs. Drain-Source Voltage === ==> === ——— g FREE) gp EP ie Pept) | LE i SSS ===—s4 | SSeS LETTE TT) # LEP tT i. = SS SE P ESSE, § EES SSS S Fe, ee A A A ee ee w LETTTETTT) «LEP tri ttt) ° - 7” ° Vas — Gate to -source voltage (V) Vps— Drain to -source voltage (V) - 118 - r .