2SK1133-3 KEXIN

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www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK1133 ■ Features

VDS (V) = 50V
ID = 100 mA
RDS(ON) ＜ 50Ω (VGS = 4V )
Complments the 2SJ166 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 Gate-Source Voltage VGS ±7 Continuous Drain Current ID 100 Pulsed Drain Current (Note.1) IDM 200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Channel Temperature Tch 150 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ ■ Marking Marking G11 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 50 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±7V ±10 uA Gate Cut-off Voltage VGS(off) VDS=5 V ID=1uA 1 2 V Static Drain-Source On-Resistance RDS(On) VGS=4V, ID=20mA 50 Ω Forward Transconductance gFS VDS=5V, ID=20mA 20 40 ms Input Capacitance Ciss 7 Output Capacitance Coss 6 Reverse Transfer Capacitance Crss 2 Turn-On DelayTime td(on) 6 Turn-On Rise Time tr 25 Turn-Off DelayTime td(off) 36 Turn-Off Fall Time tf 35 VGS=5V, VDS=5V, ID=20mA, RL=250Ω,RG=10Ω ns VGS=0V, VDS=5V, f=1MHz pF 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK1133 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK1133 ■ Typical Characterisitics