2SK1103 PANASONIC

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Silicon Junction FETs (Small Signal) unit: mm 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 n Features l Low ON-resistance l Low-noise characteristics 1: Source JEDEC: TO-236 2: Drain EIAJ: SC-59 3: Gate Mini Type Package (3-pin) n Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol V GDS ID IG PD Tch Tstg Ratings -65 150 150 -55 to +150 Unit V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Symbol IDSS * IGSS V GDS V GSC | Yfs | R DS(on) C iss C rss Conditions V DS = 10V, VGS = 0 V GS = -30V, VDS = 0 IG = -10mA, VDS = 0 V DS = 10V, ID = 10mA V DS = 10V, ID = 1mA, f = 1kHz V DS = 10mV, VGS = 0 V DS = 10V, VGS = 0, f = 1MHz min 0.2 -65 1.8 max -10 -3.5 Unit mA nA V V mS W pF pF * IDSS rank classification Marking Symbol (Example): 4L 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9±0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4±0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 typ -1.5 2.5 300 1.5 Runk IDSS (mA) Marking Symbol O 0.2 to 1 4LO P 0.6 to 1.5 4LP Q 1 to 3 4LQ R 2.5 to 6 4LR

Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS | Yfs | ¾ VGS | Yfs | ¾ ID C iss, Coss, Crss ¾ VDS 2SK1103 0 160 40 120 80 14020 100 60 320 240 200 280 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 06 5413 2 2.5 2.0 1.5 1.0 0.5 Ta=25˚C VGS =0V – 0.2V – 0.4V – 0.3V – 0.1V Drain to source voltage VDS (V) Drain current ID (mA ) 2.5 2.0 1.5 1.0 0.5 Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA ) VDS =10V Ta=25˚C IDSS =10mA Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 08 26 4715 3 2.5 2.0 1.5 1.0 0.5 IDSS =10mA VDS =10V Ta=25˚C Drain current ID (mA ) Forward transfer admittance |Yfs| (mS ) 1 3 10 30 100 VGS =0 f=1MHz Ta=25˚C C iss C oss C rss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)