2SK1101-01MR FUJI
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- - FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES Features Outline Drawings @ High speed switching THs a gs —n5102 Low on-resistance i yo pfnee @\\No secondary breakdown | ras ~T | at @ High voltage 3 “3 @'/oss=+30V Guarantee “| [ees | © \\valanche-proof 4 Tisoe | |] Applications . ! | i done 3Souree ®@ witching regulators i _ | eUPS | IL onor fie ageso2 250002 J 2n0e @ 9C-DC converters @ 3eneral purpose power amplifier JEDEC — EIAJ SC-67 ™@ Max. Ratings and Characteristics Equivalent Circuit Schematic @.\\bsolute Maximum Ratings(Tc=25°C) : _ Items Units = ~ brain-source voltage Voss | 450 Vv Continuous drain current Ip _i 10 A ; Pulsed drain current Tngowy | 8] Dra) ~~ Sontinuous reverse drain current | Ine [10 A __ Sate-source peak voltage Voss | 30 Vv __ Max. power dissipation’ Po 5s | Wo Gate(s) Operating and storage Teo | 150 |S __ temperature range Tow =55~ +150] °C Source(s) @!lectrical Characteristics(Te=25°C) OO _ Items | Symbols | ___Test Conditions | -Min. | Typ. | Max. | Units __ Drain-source breakdown voltage | Vasmuss__| In=ImA__Vos=0V _ 40 [| Vv ___ Gate threshold voltage Veseny | Io=1mA_Vos=Ves 2.5 5.0 Vv 7 ; , Vos =450V “Ten = 25°C 0 | 500 | uA Zero gate voltage drain current bs Vos=0V Ten= 125 | 02 10) mA Gate-source leakage current | Toss | _Vos==30V Vos=0V_ |_10 | 100 nA ___ Drain-source on-state resistance | Rosiom | In=5A_Vos=10V. 05 | 065) 0 __ Forward transconductance | gis | In=SA_Vns=25V 6.5 Ss —_ Input capacitance Cus} Vos=25V 1200 | 1800 __ Output capacitance Coss | Vos =0V 240 | pF __ Reverse transfer capacitance | Crs | f, = MHz [70 | 100 _ Turp-on time ton ee ee Z 30__| 45 ___Mtonttarom Ft) [te very b=10A — 80 120 ; Turn-off time ton town] 20 | 160 [240 | ™ __ Mtevory Ft [ro ei 30 120 ~_ Diode forward on-voltage | Vso Te=2XIpx Ves=0V Ton = 25°C 10; 15] Vv — Reverse recovery time ter Tr=lon d/h =100A/ ps _Ten=25°C 500 ns @ ‘thermal Characteristics _ Items | Symbols [Test Conditions Min. | Typ. | Max. | Units 1 Runen-a» | channel to air. | 62.5 | °C/W Th sista | Renen-a a pee __ Thema Resistance Ruyen- | channel to case L_ | 25 c/w. A2-148
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