2SK1096-MR FUJI

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Technical content

a 2S K1 096-MR FUJI POWER MOS-FET ———— N-CGHANNEL SILICON POWER MOS-FET F Ill Ss E R | ES HW Outline Drawings M@Features ——

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@High current [ ve : Levee @ Low on-resistance _ _ ® No secondary breakdown 5] q iF @Low driving power y él 5 ; @tigh forward Transconductance ‘| aea lL —--4 Applications age f ssa ®@ Motor controllers | |G Source ®@Cieneral purpose power amplifier | {Lono2 . ue ? @LIC-DC converters enue | f 22u402 20202 Scar MMax. Ratings and Characteristics MEquivalent Circuit Schematic @/.bsolute Maximum Ratings(Tc=25°C) — Trams Unis ae “Tirain-source voltage [Voss o | Vv. ___Continuous drain current Ip __| 13. | A __ Pulsed drain current Inomy | 52 | AA _ Drain(D) ~ Continuous reverse drain current | Ion | B | A __Gate-source peak voltage Voss | =20 | VO “Max. power dissipation Py | 30 W _ Gote(c) ol Cperating and storage Ts | 150 | __tomperature range Tae =—55~+150) ‘C Source(S) @Electrical Characteristics(Tc = 25°C) as _ Items Symbols [__Test Conditions Min. [ Typ. | Max. | Units __ drain-source breakdown voltage | Viomoss | _In=ImA_ Ves=0V [wo | | |v ___3ate threshold voltage | Vesam In=lmA__Vs=Ves 10 15 | 25 | Vv . Vos=60V Ton = 25°C 10 500 wA 1 v ain ci | Tena2sc | 500 | A —atesource leakage current | Icss | Vos £20V Vos=0V 30 | 100 nA , stance Inp=?.0A Vos=4V | 0.12| 0.19) a __Zainsowres onsite resianee | Rosen) Vez 0A Wes JO 008) Ta ___ forward transconductance _| girs jj Wo=70A Vos=25V00 | | ___ put capacitance | Ciss | Vins =25V 500 750 ___ Jutput capacitance | Coss | Ves =0V 200 300 | pF Reverse transfer capacitance | Css | f =IMHz | 60 | 90} Turn-on time ton talon =a9y 4a 10 15 — tte ttaom tt) | vociov oA | 30__| 45 ns Turn-off time tors tevot Re 250 90 | 120, ____ftaorn Ft) [te Le 40 a diode forward on-voltage | Vay ede Neti Tes iis] 74] iv __ Reverse recovery time te Tr=Iog_di/dt=100A/ys_Ten = 25°C 50 ns @Thermal Characteristics _ Items Symbols | _Test Conditions | Min. [| Typ. | Max. | Units _ ema Ss Rinen-e | channel to case 4.17_ | °C/W. A2-142

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VOT) o WU HTH ° 2 4 6 -50 ° 50 100 150 vos (Vv) Ce) Typical Output Characteristics Drain-Source on State ‘Resistance vs. Tch “FA tl vacaewrecasy — ga fietgn dev uy won sey SEEeneeemasune suuballgggeesasee [| TTT TAT TT TT cy LA Coo -GSS00080/ 000088 CoE A eee EE Pe oF EERE HHH ATT TTT [Th Seen Cocco J Pusan He rxlon) [A aoa sav be gE ©) Aer w Saanen see TT] o a [I 4 ATT aa SSS ES tov sassy saeeeesunt SanaSesaareiere ° LA ee CLL HEHEHE i) 02 04 0.6 0 10 20 30 Vos {VJ In (A) Typical Transfer Characteristic Typical Drain Source on State Resistance vs. lo Pf pee | SS — teh CEES (OCC ee © ; boy 7 4 CO eee eo} ECC oRE oT HAE CCCcecoceceecc a Pes CT ASSAR Rae =SS SERRE EEE! rT RECO Ps 5H vesttn) yo FLERE RECS] » Hf Eee eed © Ere ro LOCC Ceo | COOP eee oti oD Or oO 10 20 30 -50 0 50 100 150 fa) Tch (0) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Tch A2-143

_ FUJI POWER MOS-FET- 2SK 1096-MR CoH TH ° I 4" TAMIA eee es ° FSS Se «ff nee Py es z KES EE oa wth FA PASSES eee] eye + on SET iiad//atetoesresach BEES EEE w HEP ON EEE, Trai TApaseraesais w ai eat fH HEH JT” PR oO 20 40 60 60 0 we Qe {nc} Typical Capacitance vs. Vos Dynamic Input Characteristics Mo aan \\ oro » OE r bpeL IN) cot FREE FE iLL LNEE H a » me PEEPS wo BREESE See ww ® AE BNene eee eee PER aan am CCCCCO eer) [|]. | HH ow LLL TET TTT} Coo Het ° 0.5 10 rc} 5 30 700 150 vso (VJ Te (0) Forward Characteristics of Reverse Diode Power vs. Temperature Derating N08 ee re | 2 ee mn hi SEE f EOS ESSE HO NS HiT} o pence o Eerbes AN TN SSS SSS SSS Sas fe Neos Slee | bee RGN et HRS "Se 8 I com wae ae a 2 Z : 5 Eee = ; Es EER 002 BESS Silty ee Eee A aft es Ett co et t (s) ° vos (¥) Transient Thermal Impedance Safe Operating Area A2-144

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